- 學位論文
非重疊佈植N型金氧半場效電晶體熱電洞注入效率之研究
Study of Hot Hole Injection Efficiency in Non-overlapped Implantation NMOSFET
摘要
未來記憶體容量需求愈來愈大的前提下，如何擁有良好的工作效 率，是一個非常重要的課題。在現今的世界裡，機動性與便利性已經 成為趨勢。因此行動資訊市場也隨之快速興起。行動電子產品，如手機、數位相機、電子辭典，與筆記型電腦等，在市場上的需求日益增加；而這更造成了非揮發性記憶體漸漸獲得重視，成為產業界互相爭奪的一個區塊。隨著半導體製程技術逐年的進步，非揮發性記憶體，從最早的唯讀記憶體(Read-Only-Memory，ROM)、可程式唯讀記憶體(Programmable-Read-Only-Memory，PROM)，到可抹除程式化唯讀記憶體(Erasable- Programmable-Read-Only-Memory)、電性可抹除程化唯讀記憶體(Electrically Erasable Programmable Read Only Memory，EEPROM)，以至目前最熱門的快閃記憶體(Flash Memory)，都可看見半導體製程技術在非揮發性記憶體上的運用亦逐年在進步。 本篇論文以非重疊佈值N型金氧半場效電晶體熱電洞注入效率為研究主題。以三種不同非揮發性記憶體元件利用通道熱電洞抹除做比較，並且使用TSUPREM4和MEDICI兩套軟體對三種不同元件做製程及電性上的模擬，並觀察通道相關之佈值在帶對帶穿遂引發熱電洞注入中扮演關鍵角色。
並列摘要
In order to fulfill the semiconductor memory requirements in the future, how to maintain the operational efficiency in the high memory capacity is a very important topic. The portability has already become the main development trend in current electronics market. So is the fast growing market of information technologies. Portable electronic products, such as the cell-phones, digit camera, electronic dictionary, as well as notebook computer, are increasingly demanded on the market day by day. As a result, the non-volatile memory devices have gained great attention and become very competitive in terms of performance and cost among all memory products. In this thesis, the history of the Non-Volatile Memory (NVM) and the concepts of NVM are introduced in this thesis. And the typical NVMs, such as EPROM, EEPROM, and flash memory are also discussed. Secondly, Hot Hole Injection Efficiency are simulated and compared in three different MOSFETs including a typical LDD MOSFET and two Non-overlapped Implantation NMOSFETs using TCAD tools. Their basic device characteristics and hole injection currents are deduced using TSUPREM4 and MEDICI. It is found that the implantations related channel doping profile are playing the key roles on band-to-band tunneling injections.