- 學位論文
以多重水溶液法成長氧化鋅奈米柱膜與特性分析
Characterization of Multiple-Growth ZnO nanorod Film by Aqueous Solution Deposition
摘要
在本論文中，利用濺鍍方式於藍寶石基板上沉積氧化鋅(Zinc oxide)晶種層，再以多重水溶液法(Multiple-Growth Aqueous Solution Deposition)於50度成長ZnO奈米柱陣列並轉變為薄膜，探討於藍寶石基板上所生長之奈米柱陣列與薄膜之物性、光性、化性與電性。在X光繞射分析(XRD)下得知在笑氣退火後，可以得到結晶良好的ZnO奈米柱膜。在光激螢光(PL)的分析可以得到，未退火的氧化鋅奈米柱陣列與薄膜於紫外光激發峰值約為376 nm，而在綠光(Green band)區於550~650 nm會有峰值出現，此為氧化鋅奈米柱之鋅間隙與氧空缺的內部缺陷，由實驗得知，在笑氣300 °C退火後可以填補氧化鋅內部缺陷進而改善結晶品質。在原子力顯微鏡中(AFM)得到連續且平滑的薄膜，最後再使用掃描式電子顯微鏡(SEM)觀察ZnO之表面、切面型態，並以霍爾量測(Hall measurement)分析薄膜之電特性。 目前於藍寶石基板上成長之氧化鋅薄膜，因其表面之奈米柱與柱之間的空洞與間隙較多，使得電子遷移率下降。在本研究中使用多重水溶液法維持水溶液的濃度，隨著時間的增加，得到連續且平滑之高品質氧化鋅奈米柱薄膜，更能應用於電晶體之平面化製程，發展具前瞻性之氧化鋅奈米柱薄膜電晶體(ZnO TFTs)。
並列摘要
In this study, we grow zinc oxide (ZnO) nanorod array and nanorod film with sputtered ZnO seed layer on sapphire substrate by multiple-growth aqueous solution deposition (ASD) at 50 °C. Characteristics of the ZnO nanorod array and nanorod film will be investigated. The XRD analysis shows the good crystalline quality of multiple-growth ASD-ZnO nanorod film after N2O annealing. The PL analysis of ZnO nanorod film shows the typical emissions of near band edge excitonic emission (NBE) peak at 376 nm and deep level emission (DLE) (550~650 nm) bands. The deep level emission (550~650 nm) is composite to O vacancies and Zn interstitial, the emission is improved after N2O annealing at 300 °C. In addition, AFM shows multiple-growth ASD-ZnO nanorod film can obtain a smooth and continuous film. The morphology and thickness of ZnO nanorod film we obtained by the analyses of FE-SEM and the electrical properties of ZnO nanorod film were characterized by Hall measurement. The problem of the boundaries and holes between nanorods is a key point to lead mobility decreases. In this study, we use multiple-growth ASD to ensure the concentration the solution with the growth time increases, we can obtain a high quality ZnO nanorod film transformed from arrays and it is suitable for fabricate ZnO TFTs