- 學位論文
三接面太陽能電池接面溫度的量測
Measurements of junction temperature in triple-junction solar cells
摘要
我們分別利用三種不同激發光能量，經由光激螢光光譜的量測，研究三接面太陽能電池(InGaP/InGaAs/Ge)各子電池之接面溫度。而各子電池接面溫度可藉由Varshni經驗公式擬合螢光峰值能量位置對應溫度的變化關係校準，再利用室溫下外加氙燈，峰值能量位置隨照光功率之線性關係，計算各子電池之接面溫度。 我們同時研究此三接面太陽能電池(InGaP/InGaAs/Ge)各層熱阻值，選用波長為520nm、808nm、1043nm的雷射，分別增加InGaP、GaAs、Ge各層子電池接面溫度，根據能量守恆概念，我們可得到InGaP、GaAs、Ge子電池對特定激發光能量之熱阻值。
並列摘要
The three junction temperatures of the three individual subcells of the InGaP/InGaAs/Ge solar cells were measured using photoluminescence (PL) with three different excitation lasers. The junction temperatures in each subcell were calibrated by using the Varshni relation between the PL peak energy and the heat-sink temperature. By illumination of an extra xenon-mercury lamp, the linear relation between the PL energy and illumination level clearly occurs and is advantageously used for deriving the junction temperature. We also investigated the thermal resistance of each subcell in the InGaP/InGaAs/Ge solar cells. An extra laser with different wavelengths of 520 nm, 808 nm, 1043 nm was used to increase the temperature of the InGaP, GaAs, Ge subcells, respectively. Based on concept of energy conservation, the thermal resistance is found to be for the InGaP, GaAs, Ge subcells, respectively.
參考文獻
延伸閱讀
- 王鴻彬（2011）。三接面太陽能電池之光電特性研究〔碩士論文，中原大學〕。華藝線上圖書館。https://doi.org/10.6840/CYCU.2011.00225
- 張印本、余宏彬、葉榮華、廖世平（1999）。銲接工件之三維溫度分析。船舶科技，(25)，151-163。https://doi.org/10.30037/MT.199911.0011
- 李家榮（2010）。三五族半導體發光二極體接面溫度之數值模型與特性探討〔碩士論文，國立臺灣師範大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0021-1610201315215127
- 李家榮（2011）。三五族半導體發光二極體接面溫度之數值模型與特性探討。光學工程，(113)，48-56。https://doi.org/10.30011/OE.201104.0008
- 楊竣傑（2011）。Investigation of built-in electric field in single-junction solar cells〔碩士論文，中原大學〕。華藝線上圖書館。https://doi.org/10.6840/CYCU.2011.00223