在銅薄膜上利用化學氣相沉積法合成石墨烯﹙單層石墨﹚之研究

Synthesis of Monolayer Graphene on Copper Thin Film using Thermal- Chemical Vapor Deposition

李奕德(Yi-Te Li)

指導教授 ： 鐘元良

中原大學/理學院/物理研究所/碩士(2011年)

https://doi.org/10.6840/cycu201100719

摘要

石墨烯的特殊的物理性質以及準二維的蜂窩狀結構，引起很多的學者關注。我們在銅薄膜上利用化學氣相沉積法來合成石墨烯以及研究他的成長機制。我們藉由拉曼光譜儀來判斷石墨烯的品質好壞。還有利用原子力顯微鏡來觀察石墨烯表面的形貌。藉由這些工具，我們在銅薄膜上成功成長出結構完整的石墨烯樣品。

關鍵字

石墨烯 ； 化學氣象沈積法 ； 銅 ； 薄膜

並列摘要

Graphene has emerged as an exciting material because of the novel properties associated with its two-dimensional honeycomb structures. We synthesize graphene on copper thin film by thermal chemical vapor deposition (CVD) and study the growth mechanism of graphene films. The quality of graphene on copper thin film is identied by Raman spectroscopy. The topography of graphene films on copper thin films and the structural of graphene have been investigated by scanning tunneling microscopy (STM). We have obtained the high-quality graphene synthsized on copper thin film.

並列關鍵字

Graphene ； CVD ； Copper ； Thin Film

參考文獻

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2. Meyer, J.C., et al., The structure of suspended graphene sheets. Nature, 2007. 446(7131): p. 60-63.

3. Geim, A.K. and K.S. Novoselov, The rise of graphene. Nat Mater, 2007. 6(3): p. 183-191.

4. Ōya, A. and H. Marsh, Phenomena of catalytic graphitization. Journal of Materials Science, 1982. 17(2): p. 309-322.

5. Chen, J.-H., et al., Intrinsic and extrinsic performance limits of graphene devices on SiO2. Nat Nano, 2008. 3(4): p. 206-209.