- 學位論文
直流濺鍍不同氬氣:氮氣比例之製程參數的氮化鋁薄膜光學特性研究
Optical Properties of different Ar:N_2 AlN Thin Film by DC reactive Magnetron Sputtering System
摘要
氮化鋁是具有六方纖鋅礦晶格結構及壓電特性之Ⅲ-Ⅴ族化合物半導體，擁有高壓電耦合常數及可產生超音速的表面聲波，使其適合用於元件應用，尤其是用於感測表面聲波。 本論文研究目的是以直流磁控濺鍍法，於矽基板、藍寶石基板、圖案化藍寶石基板成長氮化鋁薄膜，探討不同的氮氣比例之氮化鋁薄膜之結晶品質與光學特性。 氮化鋁薄膜樣品的製程參數為:基板溫度攝氏500度、濺鍍功率200W、濺鍍時間10分鐘及反應氣體氬氣與氮氣的流量比以5:3、5:4、5:5、5:6、5:7(sccm)五種條件下進行鍍膜。 用X-射線繞射分析，於三種基板上的氮化鋁薄膜皆有高c軸優選取向；亦探討成長在不同基板上氮化鋁薄膜Rocking curve量測的半高寬。 在X射線光電子能譜儀量測結果，可觀察到不同的氮氣含量比例，及化學鍵結的百分比不同。使用橢圓偏光儀量測出其330nm到1000nm波長的折射係數與吸收係數變化，並比較每種參數的樣品，於波長633nm處的折射係數。
並列摘要
Aluminum nitride is one kind of III-V compound semiconductor with hexagonal wurtzite structure and piezoelectric properties. It has high piezoelectric coupling constants and can induce a supersonic surface acoustic wave to make it suitable application for device, especially for sensing surface acoustic waves. In this paper, the crystal quality and optical properties of aluminum nitride films deposited on silicon substrate, sapphire substrate and patterned sapphire substrate by DC magnetron sputtering with different ratios of argon gas vs. nitrogen gas were investigated. The process parameters of AlN thin films are : substrate temperature 500oC, sputtering power 200W, sputtering time 10 minutes and ratios of argon gas vs. nitrogen gas 5:3, 5:4, 5:5, 5:6, 5:7 (sccm). By X-ray diffraction analysis, all AlN thin films on three substrates have high c-axis prefer orientation. The full width of half maximum (FWHM) of the X-ray Rocking curve of the aluminum nitride films on different substrates tell us the deviation condition of samples C-axis orientation. From X-ray photoelectron spectroscopy results, the difference of nitrogen content ratio and chemical bond percentage of AlN thin films were observed. The refractive index and absorption coefficient of samples between 330 nm to 1000 nm wavelength range was measured by an ellipsometer, then compare these properties at 633nm wavelength.