本論文主要是以滾輪式壓印技術壓印應用於奈米結構圖樣化藍寶石基板(pattern sapphire substrate, PSS)的製作,並藉此提升發光二極體(light emitting diodes, LED)的發光功率。 論文中,是以聚二甲基矽氧烷(polydimethylsiloxane, PDMS)軟性矽膠對硬性矽模具複製出一凹凸相反的軟性模具,接著利用滾輪式壓印設備以反向壓印的方式將PDMS模具內的壓印材料轉印至藍寶石基板上,並以電感耦合電漿(inductively coupled plasma, ICP)蝕刻系統蝕刻出圓洞、梯形、圓錐等PSS,並在磊晶、晶粒與封裝製程後,利用積分球量測系統對PSS LED和傳統LED進行光、電特性的量測。 而在120 mA的操作電流下,PSS LED與傳統LED的順向偏壓值均無明顯差距,相對也顯示了PSS製程並不會對LED電性造成損害。另外在發光功率量測上,圓錐PSS LED相較於傳統LED也分別提升了25.7 %、26.43 %、30.41 %、28.9 % (高度0.9 μm、高度1 μm、高度1.4 μm填充率83.53 %、高度1.4 μm填充率59.84)。
Roller imprinting technology was applied to fabricate nano scale structures of patterned sapphire substrate (PSS) to enhance the optical efficiency of light emitting diodes (LEDs). In this study, a soft polymer such as polydimethylsiloxane (PDMS) was used as a mold to duplicate the pattern of the silicon hard mold. The imprinted material was transferred from the PDMS mold onto the sapphire substrate through the reversal imprinting process with roller imprinting equipment. Inductive coupled plasma (ICP) etching was then employed to fabricate hole, trapezoidal and cone structure PSS. After epitaxy and chip process, the current–voltage (I–V) and light output power for PSS LED and conventional LED were measured by a current measure unit and an integrated sphere with a calibrated power meter. The forward voltage is almost kept identical under a 120 mA injection, it represents the PSS process may not damage the LED. Compared with conventional LED, the optical efficiencies were enhanced to 25.7 %、26.43 %、30.41 % and 28.9 % for cone profile PSS LED with 0.9 μm height、1 μm height、1.4 μm height with filling factor 83.53 percent and 1.4 μm height with filling factor 59.84 percent, respectively.