本論文利用熱蒸鍍的方式來沉積Pentacene有機半導體薄膜,並利用頂部閘極式結構來製作酸性離子感測元件,以及利用濺鍍的方式沉積氮化鋁介電層。介電層的沉積使用較大的遮罩,以達成覆蓋Pentacene的目的。但以電晶體的機制而言,本論文中尚未做到汲極電流的飽和趨勢。在熱蒸鍍Pentacene中,我們利用不同蒸鍍條件鍍率0.4 Å/s、0.8 Å/s、1.2 Å/s 與基板溫度60℃、80℃、100℃的搭配,探討Pentacene的成膜品質,發現在條件0.4 Å/s, 80℃、0.4 Å/s, 100℃、0.8 Å/s, 60℃皆能有薄膜相的產生,而0.8 Å/s, 60℃則是會有塊狀相的結構。在AFM量測下0.4 Å/s, 80℃、0.4 Å/s, 100℃皆得到grain size為0.5μm~0.7μm,基板溫度越高越能形成較大的晶粒狀態,而0.8 Å/s, 60℃的grain size為0.1μm。 我們選擇此三種條件做離子感測元件的應用,我們得到在0.4 Å/s, 80℃、0.4 Å/s, 100℃以汲極電壓給予-1(V)能達到μA的等級,在各PH值的鑑別能力也能達到0.45μA以上。 由於本論文中之汲極電流電壓的量測數據,我們並沒有得到汲極的飽和電流趨勢,因此我們尚未作出利用電晶體感測的機制,目前只能說他是一電阻式PH值感測元件。
In this thesis, we deposit Pentacene organic thin film by thermal evaporation system, and deposit AlN dielectric layer by DC sputter. We manufacture acid solution ion sensor device by top gate structure. For covering Pentacene thin film, we deposit AlN dielectric layer with large shadow mask. For research quality of Pentacene thin film, we choose different thermal evaporator rate was 0.4 Å/s、0.8 Å/s、1.2 Å/s with substrate temperature 60℃、80℃、100℃. We know condition of (a)0.4 Å/s, 80℃(b)0.4 Å/s, 100℃(c)0.8 Å/s, 60℃ to find thin film phase, but we find bulk phase in condition of 0.8 Å/s, 60℃. Measurement of AFM, (a)0.4 Å/s, 80℃(b)0.4 Å/s, 100℃ grain size is 0.5μm~0.7μm. And 0.8 Å/s, 60℃ grain size is 0.1μm. So the higher substrate temperature and lower thermal rate can get large grain size. We manufactured ion sensor device that used three different conditions. We find the result can reach μA level when drain voltage is -1 (V) and gate voltage is -0.5(V) with conditions are 0.4 Å/s, 80℃, and 0.4 Å/s, 100℃. PH value of the ability to identify can reach to 0.45μA above.