熱點偵測導向之混合式光學鄰近效應修正方法

在深次微米的製程中，積體電路的特徵尺寸(feature size)不斷的縮小，光罩上圖形的線寬已經小於光刻技術所使用光源的波長，使得光學鄰近效應(Optical Proximity Effect)所帶來的影響更加明顯，並造成晶片良率下降，為此有許多的解析度增強技術(Resolution enhancement technology)已被廣泛地運用來減少光刻過程所帶來的負面影響，如電子束微影技術(Electron-Bean Direct Write)、光學鄰近修正(Optical Proximity Correction, OPC)等許多增強解析度方法。光學鄰近修正是一種常用來改善光罩圖形失真問題的光學光刻方法，我們可以藉由它來補償原始的光罩圖形，使得在經過光罩曝光後得到預期的成像；規則式OPC(Rule-based OPC)以及模型式OPC(Model-based OPC)是現今兩個主要的解析度增強技術。規則式OPC是藉由取得圖形特徵的實驗數據幾何數據，再以查表的方式對整體佈局進行修正，此方法較為快速；而模型式OPC則會考慮許多的製程參數以及光學參數來對佈局圖形做光學模擬，並且反覆地對圖形做修正，直到得出優化的結果為止，此方法需耗費大量的計算時間，但有較佳的可靠度以及精確度。本論文以混合式OPC(hybrid OPC)光罩修正方法，結合規則式OPC與模型式OPC修正方法並且加入熱點(hotspot)分析以提升光學微影成像解析度，可依照不同製程產生修正補償表以降低程式處理時間並一定程度的精確度。所提演算法將依據模型式OPC修正數據，建立補償資料庫(rule-based database)。我們也建立一個有效的熱點分析找出失真率很大的區域，再針對此區域做更細部的修正，來達到提升光學微影成像的解析度之目的。實驗結果可知我們的方法和MBOPC[25]相比，在特徵圖形的修正中EPE減少86.12%、BME減少16.68%，此外熱點的部分也下降30.76%。

關鍵字

光學微影技術；光學微影修正技術；光罩

並列摘要

In recent years, semiconductor manufacturing process has made great progress. The feature size of IC had been smaller than the lithography wavelength. In consideration of the aspect of physical optics, it might make a severe impact on the IC manufacturing process regardless of any slight change. What has to be noticed is the process variation, which may incur latent process hotspots and yield loss. Hence, there are some approaches proposed to mitigate the effects of the lithographic process, which is also called Resolution Enhancement Technology (RET), such as e-beam proximity effect correction, Optical Proximity Correction (OPC) and various methods. In semiconductor manufacturing, OPC is a common way used in optical lithography to improve the image distortion problem and layout mask quality. There are the two main ways of OPC. The first way is Rule-based OPC is a simpler technique which is to obtain the reliable geometry data of the pattern features, and then apply to the layout mask by looking up the bias table. The other way is model-based OPC, it considers several process effects and optical parameters to simulate the layout pattern and apply a feedback system back and forth to end up with an optimal result. This way is more complex and time-consuming, but the reliability and accuracy of the result will significantly improve. We propose a new method which uses hybrid OPC to enhance the resolution of lithography effectively. Our program will combine rule-based and model-based OPC with hotspot detecting and fixing system. According to different manufacturing process, integrity bias table can overcome the problem of computational time and maintain image accuracy. Our approach will augment the rule-based database by checking and analyzing hotspots. Moreover, the new hotspot detection approach can locate the significant distortion regions and deal with more detail correction procedure.

並列關鍵字

Mask ； OPC ； lithography

參考文獻

[1] S. Banerjee, K. B. Agarwal and M. Orshansky, “SMATO: Simultaneous Mask and Target Optimization for Improving Lithographic Process Window,” in Proceeding of the International Conference on Computer-Aided Design, pp.100-106, 2010.

[2] Chung-Wei Lin, Ming-Chao Tsai, Kuang-Yao Lee, Tai-Chen Chen, Ting-Chi Wang, Yao-Wen Chang, "Recent Research and Emerging Challenges in Physical Design for Manufacturability/Reliability," in Proceeding of Asia and South Pacific Design Automation Conference, pp.238-243, 2007.

[3] D. Ding, A. J. Torres, F. G. Pikus and David Z. Pan, “High Performance Lithographic Hotspot Detection using,” in Proceeding of Asia and South Pacific Design Automation, pp. 775-780, 2011.

[4] Y. Chen, Z. Shi, X. Yan, “An Automated and Fast OPC Algorithm for OPC-Aware Layout Design,” in Proceeding of International Symposium on Quality Electronic Design, pp.782-787, 2007.

[7] Peng Yu, Shi S.X. and Pan D.Z. , "Process variation aware OPC with variational lithography modeling," Design Automation Conference43rd ACM/IEEE , pp.785-790, 2006

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熱點偵測導向之混合式光學鄰近效應修正方法

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