鍺材料金屬接觸電極與其應用之研究

Metal contact for germanium materials and its applications

卓可甡(Ke-Shen Jhuo)

指導教授 ： 廖森茂

中原大學/工學院/電子工程研究所/碩士(2006年)

https://doi.org/10.6840/cycu200600262

摘要

本論文中我們探討Au/Ag/Au 的厚度、回火溫度以及回火時間對於p-Ge基板歐姆接觸之影響，首先利用TLM之方法，當Au/Ag/Au厚度是20nm/25nm/150nm，回火溫度350℃，回火時間2分鐘時，得到了最佳的特徵電阻值3.8×10-5 Ω-cm2 。接著我們將此條件來做變溫量測，當量測溫度由室溫增加到130℃時，其特徵電阻增加了約5倍。
另外，我們量測了GaAs和InGaP在鍺基板上的單接面太陽電池的I-V和P-I特性，每個太陽電池的面積為0.159平方公分，量測出來的結果，GaAs太陽電池的P-I斜率及效率都比InGaP太陽電池還要好，然而太陽電池的效率隨著P-I斜率的減少而增加，故以較佳效率的太陽電池條件來做LED其結果並不一定會使LED的發光效率較好。

關鍵字

鍺基板 ； 歐姆接觸

並列摘要

The multi-layered Au/Ag/Au metal structure is investigated through the TLM method. And the surface morphology inspection is to study the feasibility of forming a p-type ohmic contact for p-type Ge material in this report. The optimum metallurgical structure Au (20nm) / Ag (25nm) / Au (150nm) after annealing at 350 oC for 2 minutes arrives at a specific contact resistance ρc ~ 3.8×10-5 Ω-cm2 can be obtained through a TLM method. In addition, when the ohmic contact is measured at the elevated temperature 130oC, the specific contact resistance ρc is increased by ~5 times as compared with that measured at room temperature.
Besides, the current–voltage (I–V) and output power–current (P–I) characteristics of GaAs and InGaP single junction solar cell grown on Ge substrate have been also studied. Every solar cell area is 0.159cm2. Both the P-I slope and the efficiency of the GaAs solar cell are better than those of the InGaP solar cell. Consequently, the solar cell efficiency increases however with the decreasing P-I slope. Therefore, the desired performances of the solar cells and LEDs must be traded off.

並列關鍵字

Ge substrate ； ohmic contact

參考文獻

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