氫化非晶矽對薄膜電晶體特性之分析

The analysis of hydrogenated amorphous silicon on characteristic of thin film transistor

詹裕程(Yu-Cheng Chan)

指導教授 ： 廖森茂

中原大學/工學院/電子工程研究所/碩士(2006年)

https://doi.org/10.6840/cycu200600270

摘要

近年來,氫化非晶矽薄膜電晶體成為高品質液晶顯示器的主要開關元件。非晶矽薄膜電晶體品質的好壞對液晶顯示器的性能影響有很大關係，因此如何改善非晶矽薄膜電晶體的品質一直是研究及生產上努力的目標。薄膜電晶體在液晶顯示器中為控制灰度訊號之重要開關元件。本論文探討，經過不同回火條件與強背光源照射下對非晶矽薄膜電晶體特性之影響，在不照光及閘極方向照射強光條件下做分析比較。最後由實驗得知，為求高性能及高品質液晶顯示器，最佳的非晶矽薄膜電晶體元件特性，我們獲致有較低之臨界0.29 V及開/關電流比(Ion/Ioff)的比值達107，場效遷移率(μ)為0.63 cm2/V-s，次臨界擺幅為0.98 V/decade，這些數據足夠因應液晶顯示器應用需求。

關鍵字

anneal ； amorphous silicon

並列摘要

Recently, the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) become promising switching elements in the high quality liquid-crystal display. The quality of the a-Si:H TFT influences to a great extent to the performance of the liquid crystal display. Hence the quality improvement for a-Si:H TFT encourages intensive research and promotes the production.The TFT is attractive for switching element used to control the gray level signal in liquid crystal display. In this paper, we investigate the effect of the a-Si:H TFT on relevant characteristics through different anneal conditions under intense gate-side illumination. Besides, the comparison of TFT characteristics under dark and intense back-gate illumination are analysed and discussed.Final, In order to achieve high quality of active matrix liquid crystal displays (AMLCDs) and good performance of the a-Si:H TFTs devices, we have obtained the high Ion/Ioff current-ratio of about 107 at its threshold voltages of 1.27 volt, the filed effect mobility of 0.631 cm2/V-s and the subthreshold swing of 0.96 V/decade, which are suitable for the application to the AMLCDs.

並列關鍵字

回火 ； 非晶矽

參考文獻

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