以脈衝式陽極氧化法製作半導體雷射之研究

Study of Pulsed Anodic Oxidation for Fabricating Semiconductor Laser

劉庚昇(Keng-Shen Liu)

指導教授 ： 賴再興

中原大學/理學院/應用物理研究所/碩士(2006年)

https://doi.org/10.6840/cycu200600468

摘要

本論文對脈衝式陽極氧化層的製作、半導體雷射的製程、光電特性的量測以及理論計算提出詳細的說明。首先將氧化層快速回火，藉由溫度的改變並透過崩潰電壓值的量測來評估氧化層品質的好壞，我們的結果顯示在成長電流密度為J=100 mA/cm2和J=140 mA/cm2，且回
火溫度為 623 K時，有最佳的氧化層。接著，將此最佳化條件引入半導體雷射的製作中，進行一連串的實驗與分析，以便評估脈衝式陽極氧化法製作半導體雷射的可行性。經由切割不同腔體以及各種變溫實驗所觀察到的光電特性發現到，即使在高溫之下，我們的半導體雷射
仍維持80 %以上的內部量子效率。最後，我們對脈衝式陽極氧化層的高功率半導體雷射之優缺點做些探討。

關鍵字

崩潰電壓 ； 半導體雷射 ； 脈衝式陽極氧化法

並列摘要

In this thesis, we mainly deal with the fabrication processes of pulsed anodic oxidation and semiconductor laser, the measurements of the
photo-electrical characteristics theoretical analyses of the obtained devices. Firstly, the oxide layer was rapidly thermally annealed at various temperatures, and its quality was evaluated via the breakdown voltage measurements. Growth current density of J=100 mA/cm2 and J=140 mA/cm2, and annealing temperature of T=623 K were the optimal parameters we obtained for our oxide layers. Secondly, the optimal parameters were used for the manufacture of our semiconductor laser,
and a series of measurements and analyses were conducted to evaluate the feasibility of the pulsed anodic oxidation for fabricating semiconductor laser. By cutting different cavity length and changing temperature, the observed photo-electrical characteristics showed that, internal quantum efficiency as high as 80 percentages was obtained for our devices even at
high temperatures. Finally, pros and cons of the characteristics of the high-power quantum-well laser diode with pulsed anodic oxidation were
discussed.

並列關鍵字

breakdown voltage ； pulsed anodic oxiddation ； semiconductor laser

參考文獻

[1] Pallab Bhattacharya, Semiconductor Optoelectronic Device

(Prentice-Hall International, Inc. 1997)

[2] Larry A. Coldren, and Scott W Corzine. Diode Laser and Photonic

Integrated Circuits (Wiley, 1995)

[3] Govind P. Agrawal, and Niloy K. Dutta. Semiconductor Laser (Van