氫氣電漿對矽晶片表面改質及溫度測定

Diagnostics of Hydrogen Plasma Temperature with in situ Optical Emission and Silicon Probes

鍾奕節(Yi-Jie Chung)

指導教授 ： 李世琛

中原大學/理學院/化學研究所/碩士(2006年)

https://doi.org/10.6840/cycu200600731

摘要

利用RF(radio frequency) 來激發氫氣(純度99.999%)產生電漿，測定氫氣電漿產生的條紋以及溫度分佈情形，亮暗條紋會在放電管中產生，每一個亮區以及暗區的溫度都不一樣，在每個亮暗區有不一樣的寬度。我們討論在不同的亮暗區分子分佈情形以及溫度來了解氫氣電漿。
了解氫氣電漿的溫度之後，利用原位(in situ)光學偵測技術以及接觸角偵測儀器，來探討氫氣電漿改質矽晶片特性。把矽晶片放置於放電管中不同的位置，再改變不同的處理時間，觀察矽晶片的表面親水特性的改變，來測定出在不同位置上電漿造成不同的影響。在用接觸角偵測儀器來偵測經由氫氣電漿處理過後的矽晶片，電漿的光譜訊息和矽晶片表面特性是有關連性的，在放電管中改變放置位置以及在氫氣電漿中添加不同比例的氦氣可以改變矽晶片表面之親水性。論文中簡單討論滴在矽晶片表面的水滴面積和接觸角之間關係。我們從觀察電漿溫度以及矽晶片表面對水的親水性，在這裡矽晶片用來測定電漿情況，就如同化學實驗中常利用石蕊試紙來測量酸鹼性一樣，用來觀察電漿的改質特性。

關鍵字

電漿

並列摘要

We use radio frequency amplifier to excite hydrogen (99.999% of purity) to produce plasma, the of determining the hydrogen plasma and plasma situation and temperature, the bright dark region produced in the positive electrode, the temperature in bright region and dark region is different, there is different width in each bright dark region, discussion bright region and dark region distribute situation and temperature to understand the hydrogen plasma.
In this work, an approach has been adopted to explore plasma properties by combining an in situ optical emission technique with a contact angle measurement. Hydrogen plasma was generated with a radio-frequency power source. The plasma parameters such as number densities and temperatures were derived from the optical emission spectroscopic data. Small silicon chips were placed at various positions inside a discharge tube as probes for the plasma conditions. The hydrogen-plasma-treated silicon chip surfaces were characterized with the contact angle measurement method. The change of wettability on the silicon surface was observed with various plasma treatment times. The spectroscopic information about the plasma is correlated with the results of the surface characterization. It is found that the rate of the increasing hydrophilicity is sensitive to the amount of helium added and the location in the discharge tube. A simple model describing the relation between the surface coverage area of water droplet and the variation of contact angle has been established. We have proposed plasma excitation and reaction mechanisms for the observed correlation between plasma temperatures and the wettability of the silicon surface. It shows that small silicon chips can serve as “litmus tests” for the plasma conditions without introducing too much perturbation.

並列關鍵字

plasma

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