提升過渡金屬二硫化物拉曼光譜與光致發光之特性研究

Study on Improving the Raman Spectroscopy and Photoluminescence Properties of Transition Metal Disulfides

李明奇(Ming-Chi Li)

指導教授 ： 莊家翔

中原大學/電機資訊學院/電子工程研究所/碩士(2021年)

https://doi.org/10.6840/cycu202100459

摘要

我們使用濕式轉印法先將化學氣相沉積法生長的單(多)層氮化硼轉移至二氧化矽/矽基板上，目的是取代作為基板的二氧化矽，氮化硼具有更平整的表面及低帶電雜質的特性，接著同樣用濕式轉印將二硫化鉬或二硫化鎢轉移至氮化硼上，目標是為了量測在有無氮化硼作為基板的前提下，擁有獨特光學特性的二硫化鉬或二硫化鎢會有什麼影響。在實驗過程中，我們使用了拉曼光譜、光致發光光譜、原子力顯微鏡、光學顯微鏡及X射線繞射來觀察樣品的表面起伏、晶格結構與光學特性。我們也對使用乾式轉印的氮化硼結合同樣材料的異質結構做拉曼的光譜量測，目的是為了找出光致發光強度最強的樣品，最後證實了使用濕式轉印的單層氮化硼作為基板，能將過渡金屬二硫化物的光致發光強度提升最多，未來可能運用於電子及光電元件的應用。

關鍵字

二維材料 ； 二硫化鉬 ； 二硫化鎢 ； 六方結構氮化硼 ； 拉曼光譜 ； 光致發光光譜

並列摘要

We firstly use the wet transferring method to transfer the single layer of hexagonal boron nitride grown by chemical vapor deposition method to the silicon dioxide/silicon substrate, which replaces the silicon dioxide as a stable substrate. The hexagonal boron nitride has a smooth surface so as to transfer molybdenum disulfide or tungsten disulfide to hexagonal boron nitride by the wet transferring method. Our goal is to measure the enhanced optoelectronic characteristics with or without hexagonal boron nitride as the bottom substrate. We are interested in what effect would happen with molybdenum disulfide or tungsten disulfide on hexagonal boron nitride? During performing the experiment, we used Raman spectroscopy, photoluminescence spectroscopy, atomic force microscope, optical microscope, and X-ray diffraction to observe the surface roughness, lattice structure, and optical properties of the sample. We also performed Raman spectroscopy measurements on these heterostructures of two-dimensional materials on hexagonal boron nitride by using the dry transferring method. The purpose is to find the best way in order to produce the strongest photoluminescence intensity. Finally, we confirm that single-layer hexagonal boron nitride by the wet transferring method as a substrate can increase most of the photoluminescence intensity of transition metal disulfides, which could be adopted in electronic and optoelectronic applications in the future.

並列關鍵字

Two-dimensional materials ； molybdenum disulfide ； tungsten disulfide ； hexagonal boron nitride ； Photoluminescence ； Raman spectroscopy

參考文獻

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