使用水熱法製造不同離子添加合成的氧化鋅奈米線光特性的研究

Using Different Ions in the Hydrothermal Method to Enhance the Photoluminescence Properties of Synthesized ZnO-Based Nanowires

衛雅芬(Ya-Fen Wei)

指導教授 ： 鍾文耀

中原大學/電機資訊學院/電子工程研究所/博士(2020年)

https://doi.org/10.6840/cycu202000948

摘要

本論文基於ZnO奈米材料，可用作不同應用的傳感器，包括氣體和紫外線（UV）傳感器。通過水熱法生長ZnO奈米線，通過濺射法製備種子ZnO層，將ZnO膜沉積在約200nm厚度的SiO 2 / Si襯底上。接著將Zn（NO3）2·6H 2 O和C 6 H 12 N 4用作試劑，並用去離子水作為溶劑，將它們混合至設計的組成。當使用Zn（NO3）2·6 H2O和C6H12N4作為生長ZnO奈米結構材料的試劑時，生長溫度，稀釋液濃度，生長時間和基質位置是影響合成結果的四個重要因素。通過場發射掃描電子顯微鏡(FESEM）觀察ZnO奈米線的表面形態，並使用X射線衍射（XRD）圖案分析了結晶相。FESEM圖像和XRD結果用於確定合成參數對生長的奈米結構材料的形貌和結晶性能的影響。首先，我們發現100℃是生長純ZnO奈米線的最佳合成溫度，因為可以在不同濃度的Zn（NO3）2•6 H2O和C6H12N4以及不同的合成時間下成功合成ZnO基奈米線。還研究了生長時間，襯底在平板玻璃上的位置以及Zn（NO3）2•6 H2O和C6H12N4的濃度的影響，以確定它們對生長奈米結構材料的影響。將厚度約為200nm的ZnO膜作為種子層沉積在SiO2/Si襯底上。然後使用含有不同濃度Eu（NO3）2-6 H2O或In（NO3）2-6 H2O的Zn（NO3）2-6 H2O和C6H12N4作為前體，並通過水熱法合成純ZnO以及Eu摻雜和In摻雜的ZnO納米線在不同的合成溫度下。 X射線衍射（XRD）用於分析純ZnO以及Eu摻雜和In摻雜的ZnO納米線的結晶特性，並且場發射掃描電子顯微鏡（FESEM）用來分析其表面形態。方法中的重要新穎之處在於，可以使用水熱工藝輕鬆合成具有不同濃度Eu3 +和In3 +離子的ZnO基納米線。另外，很好地研究了不同濃度的Eu3 +和In3 +離子對ZnO基奈米線的物理和光學性質的影響。FESEM觀察發現，未摻雜的ZnO奈米線可以在100°C下生長。第三個新穎之處是我們可以在低於100°C的溫度下合成Eu摻雜和In摻雜的ZnO奈米線。隨著Eu3 +和In3+離子濃度的增加，生長Eu摻雜和In摻雜的ZnO奈米線所需的溫度下降。 XRD圖譜表明，隨著Eu3+（In3+）的加入，（002）峰的衍射強度隨Eu3+（In3+）離子的濃度而略有增加，並在3（0.4)％處達到最大值。表明Eu3 +和In3 +離子的濃度對Eu3 +摻雜和In3 +摻雜的ZnO奈米線的合成溫度和光致發光性能有很大影響。

關鍵字

ZnO基納米線 ； 水熱法Eu3 +和In3 +離子 ； 光致發光特性 ； 濃度 ； Zn（NO3）2‧6H2O ； 生長時間

並列摘要

This work presents that ZnO-based nanomaterials can be used as sensors for different applications, including gas and ultraviolet (UV) sensors. To grow ZnO nanowires by the hydrothermal method, the seed ZnO layer was prepared by a sputter method to deposit ZnO films on SiO2/Si substrates of about 200 nm thickness. Next, Zn(NO3)2•6 H2O and C6H12N4 were used as reagents, and DI water with was used as a solvent, and they were mixed to the designed compositions. We found that when Zn(NO3)2•6 H2O and C6H12N4 were used as reagents to grow ZnO nanostructured materials, growth temperature, concentration of the diluted solution, growth time, and position of the substrates were four important factors affecting the synthesis results. The surface morphologies of ZnO nanowires were observed by field-emission scanning electron microscopy (FESEM), and crystalline phases were analyzed using X-ray diffraction (XRD) patterns. The FESEM images and XRD patterns were used to determine the effects of synthesis parameters on the morphologies and crystalline properties of the grown nanostructured materials. At the first, we had found that 100℃ was the optimum synthesis temperature to grow the pure ZnO nanowires, because the ZnO-based nanowires could be successfully synthesized under different concentrations of Zn(NO3)2•6 H2O and C6H12N4 and different synthesis times. The effects of growth time, position of the substrates on the carry sheet glass, and concentrations of Zn(NO3)2•6 H2O and C6H12N4 were also investigated to determine their effects on the growth nanostructured materials. ZnO films with a thickness of ~200 nm were deposited on SiO2/Si substrates as the seed layer. Then Zn(NO3)2-6 H2O and C6H12N4 containing different concentrations of Eu(NO3)2-6 H2O or In(NO3)2-6 H2O were used as precursors, and a hydrothermal process was used to synthesize pure ZnO as well as Eu-doped and In-doped ZnO nanowires at different synthesis temperatures. X-ray diffraction (XRD) was used to analyze the crystallization properties of the pure ZnO and the Eu-doped and In-doped ZnO nanowires, and field emission scanning electronic microscopy (FESEM) was used to analyze their surface morphologies. The important novelty in our approach is that the ZnO-based nanowires with different concentrations of Eu3+ and In3+ ions could be easily synthesized using a hydrothermal process. In addition, the effect of different concentrations of Eu3+ and In3+ ions on the physical and optical properties of ZnO-based nanowires was well investigated. FESEM observations found that the undoped ZnO nanowires could be grown at 100 °C. The third novelty is that we could synthesize the Eu-doped and In-doped ZnO nanowires at temperatures lower than 100 °C. The temperatures required to grow the Eu-doped and In-doped ZnO nanowires decreased with increasing concentrations of Eu3+ and In3+ ions. XRD patterns showed that with the addition of Eu3+ (In3+), the diffraction intensity of the (002) peak slightly increased with the concentration of Eu3+ (In3+) ions and reached a maximum at 3 (0.4) %. We show that the concentrations of Eu3+ and In3+ ions have considerable effects on the synthesis temperatures and photoluminescence properties of Eu3+-doped and In3+-doped ZnO nanowires.

並列關鍵字

ZnO-based Nanowires ； Hydrothermal Method ； Eu3+ and In3+ ions ； Photoluminescence Properties ； Concentration ； Zn(NO3)2‧6 H2O ； Growth time

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