在本研究中,我們利用濺鍍方式於氮化鎵、藍寶石以及玻璃等基板上沉積ZnO晶種層,再以水溶液沉積法(ASD)於50度低溫生長ZnO奈米柱陣列及薄膜,探討不同基板上所生長的ZnO奈米柱陣列轉變成ZnO奈米柱薄膜後,其相關的物性、化性及光性等特性。在光致螢光(PL)的分析可以得知,未退火處理的氧化鋅奈米柱薄膜於紫外光激發峰值的位置約位於377 nm,而在綠-黃色光約位於550~650 nm有峰值的出現,文獻指出為此為氧化鋅內部缺陷,由實驗可得知在笑氣退火處理下,可以填補氧化鋅內部缺陷進而改善晶體品質。另外,由X光繞射(XRD)得知笑氣退火後,顯示一結晶良好的ZnO奈米柱薄膜,最後再使用SEM觀察ZnO奈米柱薄膜表面型態、切面型態和薄膜厚度與霍爾量測(Hall measurement)分析薄膜之電特性。 目前於藍寶石基板上生長的ZnO奈米柱薄膜其電子遷移率可達30 cm2/V-s,且透明度高,深具發展潛力未來擬以玻璃或軟性塑膠為基板,以目前於藍寶石上生長一良好之ZnO奈米柱薄膜為基礎,發展更具前瞻性之ZnO奈米柱薄膜及薄膜電晶體。
In this study, we grow zinc oxide (ZnO) nanorod array and nanorod film with aputtered ZnO seed layer on GaN、sapphire and glass substrates etc by aqueous solution deposition (ASD) at 50 oC. Characteristics of the ZnO nanorod array and nanorod film will be investigated. The PL analysis of ZnO nanorod film shows the typical emissions of narrow exciton related UV band peak at 377 nm and broad defect related green–yellow (550~650 nm) bands. The green-yellow emission (550~650 nm) is likely due to O vacancies and the emission is improved after N2O annealing at 300 oC. In addition, XRD spectra show ASD-ZnO nanorod film has high crystalline with N2O annealing at 300 oC. The morphology and thickness of ZnO nanorod film we obtained by the analyses of field emission scanning electron microscopic (FE-SEM) and the electrical properties of ZnO nanorod film were characterized by Hall measurement. The preliminary results in this study show that the electron mobility of ZnO nanorod film on sapphire is about 30 cm2/V-s, which is higher than that of amorphous Si (a:Si) and worth highly developing. Based on the well-developed ZnO nanorod film on sapphire, we will develop advanced ZnO nanorod array film and thin film transistor in this project on glass and plastic substrates.