- 學位論文
以硝酸輔助水溶液法成長氧化鋅奈米柱薄膜之特性分析
Characterization of ZnO Nanorod Film by Nitric Acid Assisted Aqueous Solution Deposition
摘要
透明、高電子遷移率薄膜電晶體是先進顯示器發展之關鍵，因其透明則亮度高，可以低功率操作，因電子遷移率高反應速度快，可供高解析度顯示器使用，近年來迅速發展之金屬氧化物如氧化鋅(ZnO)可滿足這些要求。 在本論文中，以水溶液沉積法於藍寶石基板上生長氧化鋅奈米柱陣列並使其合併成氧化鋅奈米柱膜，並以相同方式於非晶的玻璃基板上生長氧化鋅奈米柱膜，由於玻璃基板上氧化鋅奈米柱間之間距較大，相較於藍寶石基板上較不易聚合成膜，於是加入硝酸溶液增加柱徑大小，提高柱間之合併程度，始於玻璃基板上成功生長氧化鋅奈米柱膜，且量測出霍爾電子移動率達2 cm2/V-s，對於製作薄膜電晶體(TFT)相當具有潛力。
並列摘要
Transparent and high electron mobility thin film transistor (TFT) is the key technology for modern displays. The transparency can enhance the brightness of display at lower operated power. The high electron mobility can enhance the switching speed and resolution. Metal oxides, for example zinc oxide (ZnO) can meet those requirements. In this study, we grow ZnO nanorod array and transform into ZnO nanorod film on sapphire substrate by aqueous solution deposition (ASD). To grow ZnO nanorod array on glass substrate under the same growth conditions, ZnO nanorod array cannot be transformed into ZnO nanorod film due to larger lattice mismatch and the larger gap between ZnO nanorod than those of ZnO nanorod array on sapphire. ZnO nanorod array transformed to ZnO nanorod film on glass substrate is obtained by incorporating with HNO3 solution to increase the size of nanorods and enhance the merge of ZnO nanorods on glass substrate and it exhibits electron Hall mobility of 2 cm2/V-s, is promising to fabricate TFTs.