少數電子於非重疊式離子植入金氧半場效電晶體傳輸之研究

Study of Few Electrons Transportation in Non-overlapped Implantation MOSFETs

徐慧君(Hui-Chun Hsu)

指導教授 ： 鄭湘原

中原大學/工學院/電子工程研究所/碩士(2007年)

https://doi.org/10.6840/CYCU.2007.00669

摘要

由於可攜式產品的普及，非揮發性記憶體在半導體記憶元件中所扮演的角色愈來愈重要。隨著半導體製程技術的精進，半導體非揮發性記憶體亦逐年在進步。然而，隨著元件的微縮，具功率消耗低、元件密度高、操作速度快、且相容於CMOS製程等特色的記憶元件將是未來發展的趨勢。
本論文以單電子及少數電子在新型非重疊式離子植入金氧半場效電晶體的傳輸特性做為研究主題，此記憶元件的寫入係利用通道熱電子注入，並以兩側壁區作為個別位元儲存之區域。利用適當調整的偏壓對元件進行寫入-讀取-寫入…之重覆操作，發現該元件之導通電流隨著注入之電荷具高靈敏度的步階變化，經由詳細的電流變化量測，配合理論推算及元件模擬的相互比對，可成功分析注入之電荷數量，並確認該元件未來成為單電子記憶元件之可行性。

關鍵字

單電子 ； 非揮發性記憶體 ； 通道熱電子

並列摘要

Non-volatile memories play more and more important roles with the emergence of the portable microelectronic products. The non-volatile semiconductor memories have rapidly progressed as the semiconductor technologies advance. The memory devices having low power consumption, high density, high-speed operation, and full compatibility with the standard CMOS processing will be the future development trend in non-volatile memories.
This work explores the single-electron and few-electron transportations in the Non-overlapped Implantation (NOI) MOSFETs. As potential non-volatile memories, the NOI devices can be programmed by channel hot electron injection. The sensitive drain current shifts of the NOI device under properly tuned reading and programming conditions can be successfully observed and directly related to single-electron or few-electron events. The relationship between the injecting charges and read current shifts will be cross examined by means of experiments, device simulation and theoretical deduction. The results prove the possibility for NOI devices to be used as single electron devices in the future.

並列關鍵字

NVM ； Single electron ； channel hot electron

參考文獻

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