- 學位論文
NF3遠程電漿應用於CVD鍍膜腔體清潔效能提升之研究
Improvement of PECVD Chamber Clean Efficiency Using NF3-Based Remote Plasma
摘要
本研究將電漿蝕刻反應Si-Based膜分為兩主題進行探討，首先以NF3為進料氣體，在電漿功率、電極距離與反應性氣體流量等不同之操作參數下進行SiOxNy膜之蝕刻效能探討；再探討純NF3、N2/NF3及N2O/NF3等不同之電漿蝕刻反應性氣體，對SiOxNy、SiNx與a-Si:H膜之蝕刻效能影響。配合XPS、 FTIR及OES等分析儀器對膜材性質及電漿蝕刻反應時電漿內物種變化情形進行量測。 在改變電漿功率、電極距離及NF3流量等操作參數進行SiOxNy電漿蝕刻反應中，電極間電漿功率提升、電極距離縮短與適量的氮氣添加等操作參數因電漿中的離子轟擊力相對提高，故可輔助提升SiOxNy膜之蝕刻效能。若於進料氣體端通入適量的N2O氣體，使電漿中的氧原子輔助更多的F原子生成，則會進而提升SiNx與a-Si:H膜之蝕刻效能。
並列摘要
Plasma-enhanced chemical vapor deposition of silicon-based film is typically used in applications such as isolation layers, dielectric layers or passivation of TFT and IC. In these CVD processes, amorphous silicon, silicon nitride and silicon oxide are deposited not only on substrate, but also on the chamber wall. The deposition on the chamber wall causes particle issue and thus affects film quality. Therefore, chamber cleaning process is indispensable. The objective of the thesis is to improve PECVD chamber clean efficiency. In this study, we reported the etching rate of silicon-based film (including amorphous silicon, nitride and oxide) etched by remote microwave plasma with CCP RF plasma, as a function of plasma power, spacing and gas flow ratio. Optical emission spectroscopy was used to detect the F atom intensity. It was found that the etching rate of silicon oxide was drastically improved by increasing of ion bombardment. It is also found that the addition of N2O to the NF3 plasma significantly improves the etching rate of amorphous silicon and silicon nitride.