- 學位論文
以化學浴沉積法成長氧化亞銅摻雜鎂之薄膜特性研究
Characteristics of Mg-doped Cu2O films prepared by chemical bath deposition
摘要
本實驗利用化學浴沉積法(Chemical Bath Deposition; CBD)，使用硫酸銅(CuSO4)和硝酸鎂(Mg(NO3)2)溶液以不同莫爾比例混合，在銅基板上製備氧化亞銅摻雜鎂(Cu2O:Mg)薄膜，並通入氮氣對薄膜做回火處理。藉由XRD、SEM分析其表面結構。XRD量測結果指出Cu2O(111)面為氧化亞銅摻鎂薄膜的擇優取向。SEM量測結果顯示，氧化亞銅摻鎂薄膜在經過回火處理之後，晶格顆粒大小會產生改變，從未回火前的大小不一，逐漸變得一致，薄膜表面也較為平整。 電特性方面，將薄膜表面鍍上約1500Å的金(Au)作為電極，形成Au/Cu2O:Mg/Cu結構的蕭特基二極體元件後，進行I-V與C-V量測分析。藉由C-V量測結果，計算出不同回火溫度之氧化亞銅摻鎂薄膜載子濃度約為2.65×1017~1.54×1016 cm-3。PL與熱探針量測結果皆顯示氧化亞銅摻鎂薄膜在回火500℃之後，其導電型態有轉變成P型的趨勢。
並列摘要
In this study, Magnesium doped Cu2O(Cu2O:Mg) films was prepared by Chemical bath deposition. The Magnesium doped cuprous oxide (Cu2O: Mg) films are prepared by using copper sulfate (CuSO4) solution with the addition of magnesium nitrate (Mg(NO3)2) as the source of magnesium. The films are annealed in nitrogen at different temperature. X-ray diffraction patterns show that the Cu2O:Mg films have a sphalerite structure with a dominant plane orientation of Cu2O(111). SEM measurement results show that grain size of Cu2O:Mg films becomes larger and uniform, after annealing. The Cu2O:Mg films surface is relatively smooth. In Electrical characteristics, we plate gold (Au) about 1500Å on Cu2O:Mg films as electrode to form Au/Cu2O:Mg/Cu Schottky diode elements. The Au/ Cu2O:Mg/Cu Schottky diode is characterized by I-V and C-V measurement. The C-V measurement results show that carrier concentration of Cu2O:Mg films with different annealing temperature about 2.65×1017~1.54×1016. PL and hot probe measurement results are displayed Mg-doped copper oxide films after 500℃ annealing, which conductive have a tendency into P-type.