- 學位論文
射頻磁控濺鍍製備TiVCrAlZr氮化物薄膜 性質研究
Study on Nitride Films of TiVCrAlZr by Radio Frequency Magnetron Sputtering
摘要
本研究以真空電弧熔煉爐熔煉高熵合金TiVCrAlZr靶材，再以射頻磁控濺鍍法於矽晶片沈積TiVCrAlZr氮化物薄膜，實驗以固定的射頻功率下，探討氬氣、氮氣流量不同比例對TiVCrAlZr氮化物薄膜特性之影響，藉由原子力顯微鏡(AFM)、場發射掃描式電子顯微鏡（FE-SEM）、X光繞射儀（XRD）、電子探測光顯微分析儀(EPMA)及奈米壓痕量測系統(MTS Nano-Indenter XP System)等多種儀器分析比對，瞭解各種氮氬比例下薄膜之特性。 實驗結果顯示，低氮氬百分比下呈現具固溶特性，反之則有參與鍵結特性。在提升N2/(Ar +N2)百分比過程，氮含量增加促使整個薄膜緻密性變好。為達TiVCrZrAl氮化物薄膜在不同濺鍍參數之最低能態成長，薄膜優選方向由(111)轉變為(200)。由成份分析發現，當N2/(Ar +N2)含量提升至9%時，整體氮化物薄膜氮含量達約50at%。在機械性質方面，在氮氬百分比50%時出現最大硬度值11GPa及楊式係數150GPa。
並列摘要
In this thesis, the target of high-entropy alloy, TiVCrAlZr, was smelted by electric arc smelting furnace of vacuum. Then the Nitride thin films of TiVCrAlZr were deposited on silicon wafer by Radio Frequency (RF) Magnetron Sputtering. This experiments were discussed the characteristics of thin films under different ratio of Ar and N2 with the same power of RF. AFM FE-SEM, XRD, EPMA and MTS Nano-Indenter XP System were used to analyze the characteristics of thin films with different proportion of N2 and Ar. The results of experiments shows that lower proportion of N2/(Ar+N2) leaded to the characteristic of solid-solution, and higher proportion of N2/(Ar+N2) resulted in the characteristic of bonding. The high density of films gets better with the raising of the proportion. In order to getting the minimum energy of growth of Nitride film with different parameters of sputtering, the preferred orientation of film, (200), were chosen but (111). Beside, it was found that as the proportion of N2 rises to 9 percentages, composition of N reaches 50 percentage in thin films. In the mechanical property, the film has the maximum hardness, 11GPa, and the Young’s modulus attains to 150 GPa with the 50 percentage of N2.