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  • 學位論文

不同還原條件對氧化石墨烯薄膜特性之影響

Effects of Different Reduction Conditions on the Properties of Graphene Oxide Films

指導教授 : 許經夌

摘要


本研究是利用氧化石墨烯 (Graphene oxide, GO) 水溶液且固定 濃度為3 mg/ml,接著將石英基板做親水性的處理及浸泡在3-胺丙基 三甲氫基矽烷 (APTMS) 中,以旋轉塗佈法並改變轉速製作不同厚度 的薄膜,再使用加熱還原的方式在真空的環境下通入氬氣,以不同的 加熱溫度200˚C ~ 700˚C 形成不同還原程度的還原氧化石墨烯薄膜 (Reduced graphene oxide, RGO),檢測其特性並觀察趨勢變化。 首先以AFM 觀察表面形貌,還原前後的薄膜都會形成皺褶,但 因為含氧官能基的移除使得還原後會變得較平坦,而SEM 觀察到的 結果可以與AFM 的結果相印證。藉由EDS 分析還原前後的碳氧比, 顯示還原成功的薄膜碳氧比由6:4 降低為6:1,而拉曼分析結果,還 原前的ID/IG 比從1.43 提升為還原後的1.85,代表雖然原本的薄膜缺 陷較大,但經由高溫還原移除含氧官能基,使得缺陷變更多,因此得 到成功還原的結果。我們也利用UV-vis 光譜檢測薄膜的穿透率,隨 著還原的溫度越高,薄膜的穿透率會越高,而電性量測則是使用Van der Pauw 四點量測法量測電阻率,結果顯示浸泡過APTMS 且轉速為 2000 rpm 的薄膜電阻率為1.43×10-2 Ω-cm,因此得到最佳化的結果為 還原溫度600˚C、轉速2000 rpm 且浸泡APTMS 之薄膜。

並列摘要


In this study, graphene oxide films were produced by spin coating. We heated the films with different reduction temperatures and measured their properties. First, we made the quartz substrates hydrophilic and soaked them in 3-Aminopropyl-trimethoxysilane (APTMS). Then, we made two thicknesses of film with 1500 rpm and 2000 rpm by spin coating. Finally, the films were heated and reduced to a reduced graphene oxide films with 200~700 ̊C. We observed the surface morphology by Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The films before and after reduction were formed with wrinkles, but the removal of oxygen-containing functional groups would make them flat after reduction. The carbon-oxygen ratio before and after reduction by energy dispersive X-ray spectroscopy (EDS) analysis showed that the carbon-oxygen ratio of the successfully reduced film was reduced from 6:4 to 6:1. The Raman analysis showed that the ID/IG ratio was increased from 1.43 (before the reduction) to 1.85 (after the reduction). It is because high-temperature reduction removes oxygen-containing functional groups and induces more defects. We also used UV-vis spectroscopy to detect the transmittance of the films. The higher the reduction temperature, the higher the transmittance of the film. The electrical resistivity was measured by the Van Der Pauw four-point measurement method. The results showed that the resistivity of the films of APTMS coated and spin-coated with 2000 rpm was 1.43×10-2 Ω-cm. The best results we obtained is was under the conditions: reduction temperature 600˚C, and 2000 rpm spin speed, and APTMS coating.

參考文獻


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