具感抗切換技術之多頻段低雜訊放大器設計與實現

由於近年無線通訊需求急遽成長，因此為了因應龐大的資料傳輸量，當今通訊產業無不積極開發高速無線傳輸技術。本文針對UWB超寬頻、ISM與U-NII開放式頻段並以TSMC 0.18um 1P6M Mixed/RF Standard Process製程技術分別設計了三項具備超寬頻與切頻式低雜訊放大器電路，並提出寬頻輸入阻抗匹配學理分析與設計方法以及放大器增益與雜訊之頻率響應學理分析，分析結果預期可幫助電路設計者在設計過程中提高設計效率與電路效能。故本文首先於第三章超寬頻低雜訊放大器設計電路之中提出利用電感品質因數之頻率響應設計出雙諧振頻率寬頻輸入阻抗匹配網路，並以輸出端之串聯突峰補償增益響應之衰減，藉以達到3.1–10.6-GHz超寬頻低雜訊放大器設計。在實體晶片量測結果中，|S21|達到10.2dB±0.9dB之增益平坦度、2.4-11.6-GHz之-3dB頻寬、雜訊指數NF介於3.2-4.7-dB、在頻率為6.5GHz時，IP1dB與IIP3之線性度量測各為-5dBm與+6dBm，晶片面積為1.2mm2，且在1.8V之額定電壓下其功率消耗為16mW。然而，由於世界各地對於UWB之頻段規範各有不同，因此本文考量到UWB低雜訊放大器之最大實用性，以3.1–4.8-GHz與7.3–9-GHz為世界通用頻段規格，於第四章提出以感抗切換技術設計適用於該通用頻段之雙寬頻低雜訊放大器，且於實體晶片量測結果中，得到13.35dB@4GHz與13.64dB@8.4GHz之峰值增益，其-3dB頻寬各為3.1–4.8-GHz與7.3–9.4-GHz；在低頻段3.1–4.8-GHz時，NF之量測結果在4.5–5.3-dB之間；切換於高頻段7.3–9.4-GHz時，其量測結果在6.2–7.9-dB之間；其晶片面積為0.83mm2，在額定電壓1.8V之工作條件下，不考慮緩衝器時，功率消耗為9.1mW。此外，在UWB頻段之中，5GHz頻段被規劃為應用於WLAN之U-NII頻段，因此為了延伸切頻式低雜訊放大器之應用頻段，本文以ISM/U-NII之2.4/5.15–5.75/5.8-GHz為主要設計頻段並延續雙寬頻低雜訊放大器架構提升為三頻增益輸出，於第五章提出負載網路之改良並利用MOS開關及放大器之寄生電容，使其與負載電感形成切換式雙諧振頻率響應之負載阻抗達成三頻段輸出增益之低雜訊放大器，其S參數量測之|S21|分別為10.5/17.4/15.6-dB@2.4/5.2/5.8-GHz；雜訊指數NF介於5.25–5.68-dB之間；晶片面積為0.64mm2；功率消耗在不考量緩衝器之條件下為3.6mW。

關鍵字

超寬頻；無線區域網路；低雜訊放大器；寬頻輸入阻抗匹配；頻段切換開關

並列摘要

Owing to the increasing demand of wireless communication, the industrial insurance of communication must develop wireless technology with high transmitting rate to handle the huge data transmission. This paper proposes three circuits of low noise amplifier with broadband and band-switching technique in a TSMC 0.18um 1P6M Mixed/RF Standard Process for UWB, ISM, and U-NII application. It also presents the analysis of wideband input impedance matching, gain, and noise factor frequency response. The analysis results are expected to help circuit designers derive accurate circuit component values to enhance design efficiency and circuit performance. Therefore, one circuit for UWB of the proposed LNAs in chapter 3, this paper presents that it utilized the frequency response of inductance quality factor to design the wideband input impedance matching network with dual resonant frequency. Otherwise, it also employed output series-peaking to compensate the gain response attenuation. Hence, the proposed UWB LNA could be realized between 3.1–10.6-GHz by the techniques as describing before. This proposed LNA achieves a measured 10.2dB gain with ±0.9dB gain flatness over a frequency range of 3.1–10.6-GHz and a –3dB bandwidth of 2.4–11.6-GHz. The measured noise figure ranges from 3.2–4.7-dB over 3.1–10.6-GHz. At 6.5GHz, the measured IIP3 and IP1dB are +6dBm and –5dBm, respectively. The proposed LNA occupies an active chip area of 1.2mm2 and consumes 16mW from a 1.8V supply. However, only both bands that could be available worldwide are 3.1–4.8-GHz and 7.3–9-GHz. Therefore, this paper considerd the maximum practicability of UWB LNA due to the difference of spectrum regulation worldwide. Chapter 4 proposed a dual-wideband LNA between 3.1–4.8-GHz and 7.3–9-GHz using reactance switching technique for commonly used UWB band. Experimental results presented a maximum |S21| of 13.35dB@4GHz over a −3dB bandwidth of 3.1–4.8-GHz with a noise figure of 4.5–5.3-dB. In high-band mode, the proposed LNA achieved a maximum |S21| of 13.64dB@8.4GHz with a noise figure of 6.2–7.9-dB over a −3dB bandwidth of 7.3–9.4-GHz. This chip occupies 0.83mm2 area, and consumes 9.1mW excluding the buffer, from a supply voltage of 1.8V. Otherwise, 5GHz band was planned on U-NII specification of WLAN between UWB spectrum. Hence, this paper proposed 2.4/5.15–5.75/5.8-GHz of ISM/U-NII to be main target bands in order to extend applicative bands of band-switching LNA, and designed a tri-band gain response LNA quoting dual-wideband LNA schematic. In chapter 5, this paper also reformed the loading network, and utilized the loading inductors and parasitical capacitance of MOS switch and amplifier to make a loading impedance with switching dual-resonant frequency response which could reach a tri-band output gain for 2.4/5.15–5.75/5.8-GHz ISM/U-NII application. In the case of tri-band LNA, the measured |S21| is 10.5/17.4/15.6-dB@2.4/5.2/5.8-GHz. Noise figure is between 5.25–5.68-dB. It occupies 0.64mm2 chip area, and dissipates 3.6mW, excluding buffer.

並列關鍵字

Band-Switching ； Wideband Input Impedance Matching ； Low Noise Amplifier (LNA) ； Wireless Local Area Network (WLAN) ； Ultra-Wideband (UWB)

參考文獻

Common-Gate and Current-Reused UWB LNA,” in IEEE Topical Meeting on

Microwave Theory and Techniques (TMTT), vol. 58, no. 2, pp. 287-296,

Low-Noise Amplifier in 0.13-μm CMOS,” IEEE Trans. on Microwave Theory

Noise Amplifier With ESD Protection Circuits,” IEEE Microwave and

[10] Tommy K. K. Tsang, Kuan-Yu Lin, and Mourad N. El-Gamal, “Design

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具感抗切換技術之多頻段低雜訊放大器設計與實現

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