氧化銦/釔穩定氧化鋯複合薄膜於固態氧化物燃料電池之電解質層應用

Indium Oxide/Yttria-Stabilized Zirconia Composite Films as Electrolytes for Solid Oxide Fuel Cells

黃奕鈞(Yi-Jun Huang)

指導教授 ： 林義峯

中原大學/工學院/化學工程研究所/碩士(2014年)

https://doi.org/10.6840/cycu201400725

摘要

過去文獻中，嘗試提升固態氧化物燃料電池(Solid Oxide Fuel Cells, SOFCs)內電解質層之離子傳導主要有兩種方式，第一種為改變電解質層厚度，使離子傳導時，所受到阻抗值降低，另一種為摻入其它材料，讓結構內氧空缺增加，提升離子傳導，本研究利用摻入其它材料，嘗試增加SOFC電解質層之離子傳導。
本研究使用水熱法製備釔穩定氧化鋯和氧化銦粉末，所製備出釔穩定氧化鋯粉末大小約為90nm；由於氫氧化銦為氧化銦之前驅物，氧化銦大都會繼承其前驅物氫氧化銦之大小和形貌，因此本研究利用氫氧化銦反應物之濃度差，分別製備出不同大小和形貌之氫氧化銦，經過500℃鍛燒後，得到不同形貌和大小之氧化銦粉末，從不同形貌和大小之氧化銦選出部分作為摻入材料，製備出電解質層。
研究中，先固定摻入量XIn2O3=0.06約12.7w%，但摻入不同大小氧化銦製備出不同形貌之電解質層，其中摻入奈米氧化銦所製備出電解質層為本研究內不同形貌中效能最好之膜，在900℃時，其離子傳導為0.071 Ω-1 cm-1，高於YSZ膜離子傳導之值0.051Ω-1 cm-1，為嘗試再增加離子傳導效能，將氧化銦奈米粉末摻入YSZ中之比例改變，分別為XIn2O3=0.01約2.3w%、XIn2O3=0.005約1.1w%、XIn2O3=0.001約0.2w%，發現研究中最佳比例為XIn2O3=0.005約1.1w%，其離子傳導為0.084Ω-1 cm-1於900℃，過去文獻中曾利用氧化鋅和氧化鎂作為摻雜材料，在800℃其最佳離子傳導分別為0.029、0.035Ω-1 cm-1，本實驗之值為0.05Ω-1 cm-1，分別為文獻值1.7倍及1.4倍。

關鍵字

氧化銦/釔穩定氧化鋯複合薄膜 ； 穩定態氧化鋯釔 ； 三氧化二銦 ； 固態氧化物燃料電池

並列摘要

To the best of our knowledge, there are two methods to increase ionic conductivity of solid oxide fuel cells ( SOFCs ) electrolyte. One is the decrease in the thickness of electrolyte and the other is the electrolyte is doped by foreign materials. In this work, indium oxide (In2O3) is doped into electrolyte to improve the ionic conductivity of electrolyte.
Yttria-stabilized zirconia(YSZ) and indium hydroxide (In(OH)3) are synthesized by hydrothermal method. The YSZ powder is about 90 nm. Various In(OH)3 morphology can be controlled by different concentration of InCl3. In2O3 is obtained after the calcination of In(OH)3 at 500℃. The In2O3/YSZ film is obtained by doping different In2O3 structures into YSZ films.
The electrolyte of doped various In2O3 structures, nanoparticle (NP), nano/micro cube (NMC), micro cube (MC) are discussed at first, so the ratio of doped In2O3 is fixed at XIn2O3=0.06, about 12.7 w%. In2O3 NP /YSZ films have better ionic conductivity than In2O3 MC/YSZ films and In2O3 NMC /YSZ at 900℃. Then ratio of doped In2O3 are changed to find better ionic conductivity and In2O3 structures is fixed In2O3 NP to dope into films. The value of ratio are XIn2O3=0.01, about 2.3w%、XIn2O3=0.005, about 1.1w%、XIn2O3=0.001, about 0.2w%. In2O3 NP /YSZ films with XIn2O3=0.005 have better ionic conductivity (0.084Ω-1 cm-1)than other ratio at 900℃. In reference, ZnO and MgO have been doped into YSZ, their values are 0.029 and 0.035Ω-1 cm-1 at 800℃. In2O3/YSZ films with XIn2O3=0.005 are their values 1.7 times and 1.4 times.

並列關鍵字

solid oxide fuel cells ； indium oxide ； Yttria-stabilized zirconia ； indium oxide /Yttria-stabilized zirconia Composite Films

參考文獻

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