二硫化鉬/綠色石墨烯異質接面之光電特性研究

The Study on Optoelectronic Characteristics of MoS2/Green Graphene Heterojunctions

許偉誠(Wei-Cheng Hsu)

指導教授 ： 温武義

共同指導教授 ： 蔡東昇(Dung-Sheng Tsai)

中原大學/電機資訊學院/電子工程研究所/碩士(2021年)

https://doi.org/10.6840/cycu202100751

摘要

我們成功利用化學氣相沉積直接成長二硫化鉬(MoS2)並與綠色石墨烯(以樟腦為碳源)形成異質接面。根據拉曼光譜分析，MoS2與綠色石墨烯的層數分別是具有雙層與單層結構。在逆向偏壓 10 V，光強為112 W/cm2照射下，MoS2/綠色石墨烯異質接面之光偵測器的光暗電流比 (PDCR)為11。在小偏壓操作下(-1 V)，光響應頻譜的響應範圍為300 nm到1200 nm，其UV光 (300 nm)、可見光(550 nm)、短波近紅外線(800 nm)與長波近紅光線(1200 nm)響應度分為 2.67、6.13、9.70與0.07 A/W。同時，MoS2/綠色石墨烯光偵測器隨時間的光暗電流轉換可達到90/100 μs (上升/下降時間)，暗示著超快的光響應速度。此外，在不同工作溫度環境下(從300 K到550 K)，光暗電流比從11逐漸下降至0.1，顯示MoS2/綠色石墨烯光偵測器可操作在高溫的工作環境。
綜合以上結果，MoS2/綠色石墨烯之異質接面有望應用在下一世代具環保製程的寬頻、快速響應與耐高溫之光感測元件上。

關鍵字

二硫化鉬

並列摘要

MoS₂ was grown directly to form a heterojunction with green graphene (using camphor as a carbon source) by chemical vapor deposition successfully. According to Raman spectrum, the layer number of MoS2 and green graphene are two and one, respectively. At -10 V, the photo to dark current ratio (PDCR) of the photodetector (PD) based on MoS2/green graphene heterojunction is 11 under light intensity of 112 W/cm2. Under small bias (-1 V), the photoresponse region is form 300 nm to 1200 nm and the responsivity of UV (300 nm), visible light (550 nm), short-wave NIR (800 nm) and long-wave NIR (1200 nm) are 2.67, 6.13, 9.70 and 0.07 A/W. At the same time, the photo and dark current as a function of time show the rise/fall time of 90/100 μs, indicating the ultra-fast photoresponse speed. Furthermore, at different working temperature (from 300 K to 550 K), the PDCR decrease from 11 (300 K) to 0.1 (550 K), showing that MoS2/green graphene PD could be operated at high temperature working environment.
Based on the above results, the MoS2/green graphene heterojunction with environmentally friendly processes, holds promise for the next-generation optical devices with broadband, fast optical respons and high working temperature.

並列關鍵字

MoS2

參考文獻

參考文獻

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