摘要
隨著半導體產業解析度提升技術(Resolution Enhancement Technique, RET)的快速發展，積體電路已進步至奈米級，為了改善微影造成的光學鄰近效應，在RET技術中的光學鄰近修正(Optical Proximity Correction)能夠修改光罩上的圖案，降低光學鄰近效應所造成的圖案失真。 本論文提出光學效能表現指標(Optical Performance Index, OPI)用來觀察OPC後的效能，也提出一個快速的取樣點(Tagging Point, TP)選擇演算法，此演算法可以有效的選擇出適當的取樣點。基於OPI與選擇TP的演算法，能夠在規則的圖案做簡單OPC，例如:矩形、多邊形、凹角形和凸角形。 實驗結果說明，基於OPI與選擇TP的OPC演算法，能夠改善取樣點的數量，並改善OPE。
並列摘要
The rapid advance of resolution enhancement technique (RET) has driven the integrated circuits to the nanometer-scale era. Optical proximity correction (OPC) is one of the RET techniques that can be employed to reshape the mask patterns for correcting the distortion due to the optical proximity effect. In this paper, an Optical Performance Index (OPI) is proposed as an evaluation criteria for OPC performance. Also, an efficient tagging point selection algorithm is developed to facilitate the OPC process. Based on the OPI and selection algorithm, the tagging points for OPC can be easily located on either the regular patterns, e.g., rectangle or polygon, or the irregular patterns such as convex or concave patterns. Experimental results show that the quantity of tagging point and OPE can be dramatically reduced.