奈米圖案之電解質-絕緣層-半導體感測器特性研究

Sensing Properties of Electrolyte-Insulator-Semiconductor (EIS) Fabricated at Nano Patterns

黃佑宸(Yo-Chen Huang)

指導教授 ： 陳建亨

國立暨南國際大學/科技學院/電機工程學系/碩士(2017年)

摘要

本論文利用了奈米壓印技術製作奈米圖案並結合堆疊式自主裝單分子層/二氧化矽感測薄膜達到提升EIS (電解質-絕緣層-半導體)元件感測特性之目的。
本實驗利用接觸角量測 (Contact Angle)、原子力顯微鏡 (AFM)、X射線光電子能譜 (XPS) 證明自主裝單分子層 (APTES)，改變了傳統感測薄膜的表面特性。
根據量測結果，具堆疊式感測薄膜與奈米結構之感測元件，皆能有效提升元件之感測特性；其中，浸泡九十分鐘APTES溶液且具方形奈米結構線寬/間隔為 200/400 nm的元件具有較佳的感測特性。

關鍵字

奈米壓印 ； EIS ； 自主裝單分子層 ； APTES

並列摘要

This study addresses on the characteristics of Electrolyte-Insulator-Semiconductor (EIS), with stack membrane (3-aminopropyltriethoxysilane (APTES) / silicon dioxide) and nano structures, fabricated by nanoimprint lithography.
The results of measurements such as contact angle, AFM and XPS shows the surface characteristics of stacked APTES/SiO2 is different from the conventional membrane (SiO2).
According to the results of measurements, the EIS with stacked membrane and nano patterns shows better performance. Therefore, the device soak in the APTES solution about 90 minutes and with square nano structures (line/space = 200/400 nm) exhibit the better performance.

並列關鍵字

nano imprint ； EIS ； stacked sensing membrane ； APTES

參考文獻

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