應用於表面聲波無線射頻識別標籤之氮化鋁薄膜研究

Study of Aluminum Nitride Thin Film for SAW-RFID Applications

廖文彥(Wen-Yen Liao)

指導教授 ： 王瑞騰

共同指導教授 ： 陳建亨

國立暨南國際大學/科技學院/電機工程學系/碩士(2008年)

https://doi.org/10.6837/NCNU.2008.00076

摘要

本論文主題為使用反應性脈衝直流濺鍍系統，藉由改變濺鍍系統的氮氣比例，分別在 SiO2 / Si 、 Mo / SiO2 / Si 及 Pt / SiO2 / Si 等不同的基材上沈積氮化鋁薄膜，並配合 X 光繞射儀及 SEM 來分析不同的鍍膜條件對氮化鋁薄膜沈積的影響。 實驗結果顯示在鉬上沉積的氮化鋁的結晶度最差，可能的是因為鉬金屬的表面粗糙度大且鉬本身薄膜的結晶度差的緣故；在氧化矽上沈積氮化鋁薄膜，由於氧化矽為非晶系，因此無法提供後續沉積的氮化鋁薄膜一優選成長方向，所以在氧化矽上成長出的氮化鋁薄膜的(002)強度仍比沉積在在白金薄膜上的差；在白金上沈積氮化鋁薄膜，因為白金 (111) 的晶向與氮化鋁相匹配，且白金薄膜的結晶度佳，因此有助於氮化鋁薄膜晶格的成長，而隨著氮氣濃度的提升，氮化鋁 (002) 晶向的繞射峰值增加，其它如 (100) 及 (101) 的晶向則有減緩的趨勢，因此選擇白金為下電極沈積氮化鋁薄膜最佳。預期此項技術將可應用於未來無線射頻識別標籤之氮化鋁薄膜表面聲波元件。

關鍵字

氮化鋁 ； 反應性脈衝直流濺鍍系統

並列摘要

In this thesis, aluminum nitride (AlN) thin films have been deposited by pulsed DC reactive magnetron sputtering. The AlN film was deposited with the different N2 gas flow and on the various substrate structures such as SiO2 / Si, MO / SiO2 / Si, and Pt / SiO2 / Si. The material characterization of AlN thin films were performed by XRD and SEM analysis.
The AlN thin film on Mo substrate shows weak c-axis crystallinity due to the poor surface roughness and low crystallinity of Mo electrodes. Comparing to the AlN thin films on Pt, the orientation of AlN films on SiO2 was random and had no obvious tendency because of the amorphous structure of the SiO2 substrate. Because the lattice of Pt (111) was matched with AlN and the Pt electrodes had high crystallinity, the growth of AlN (002) increased with respect to the increasing of N2 flow ratio while the (100) and (101) orientations decreased. The Pt substrate is the optimized suggestion for AlN thin film deposition.

並列關鍵字

AlN ； Pulsed DC reactive magnetron sputtering

參考文獻

[1.1] http://www.npue.edu.tw/academic/grad-ms/lin/RFID-%E7%B2%BE%E7%B0%A1%E7%89%88%E4%B8%80.pdf

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