本研究先將網版印刷碳電極 (Screen-printed carbon electrode, SPCE)進行過氧化處理,再將咖啡酸(Caffeic acid, CAF)薄膜以循環伏安法 (Cyclic voltammetry, CV)方式修飾至碳電極表面,即成功製備聚合咖啡酸薄膜修飾電極(SPCE*-PCAF)。以 SPCE*-PCAF為工作電極,進行沒食子酸(Gallic acid, GA)分子的電化學檢測分析。先將SPCE*-PCAF浸泡至 GA 溶液中,讓GA吸附電極上直接於原溶液中進行循環伏安法掃描。由實驗結果發現SPCE*-PCAF比bare SPCE更可使 GA 氧化訊號大幅增加,並由結果推測電極經過氧化處理後,電極反應面積增加,且電極表面有導電的聚合咖啡酸薄膜,可使GA氧化電流訊號有增幅的效果。實驗條件最佳化後,發現GA於pH 3的水溶液下吸附可得到最佳的氧化電流值,GA分析是以差式脈衝伏安法 (Differential Pluse Voltammetry, DPV) 進行定量,此方法的靈敏度為 7.394A/M,線性範圍介於 0.1M-20M,偵測極限為0.061M (S/N=3)。
In this study, we prepared an overoxidized screen-printed carbon electrode (SPCE*) immobilized with a thin electroactive poly(caffeic acid) (PCAF) film by cyclic voltammetry (CV), and the modified electrode was used for determination gallic acid (GA). The SPCE*-PCAF could adsorb GA strongly because the PCAF film containned highly abundant oxygen functionality. The SPCE*-PCAF was immersed in GA solution for 15 minutes, and then CV scan was operated in the same solution. The oxidation current responses increase significantly at SPCE*-PCAF as compared with bare SPCE. Under optimal differential pulse voltammetry (DPV) conditions, the proposed assay can be used to sense GA in pH3.0 buffer. The method sensitivity was 7.394A/M, and exhibited a linear response to GA in the range of 0.1-20 M. The detection limit was 0.061M (S/N=3).