氧化鋅透明薄膜電晶體研究

Studies of ZnO Transparent Thin Film Transistors

葉柏良(Barry B. L. Yeh)

指導教授 ： 陳建亨

國立暨南國際大學/科技學院/電機工程學系/碩士(2007年)

摘要

本論文主題為利用氧化鋅(ZnO)透明半導體薄膜，製作透明薄膜電晶體元件。使用射頻濺鍍，於室溫下改變氧/氬工作氣體比例、電漿功率等參數，沉積非晶質氧化鋅(ZnO)薄膜，並配合不同退火處理溫度，藉由四點探針，霍爾效應量測，X光繞射儀，光學分析儀與HP4156半導體參數儀等儀器之材料與電性量測，以了解不同鍍膜條件對透明薄膜電晶體元件特性之影響。 實驗結果顯示，氧化鋅薄膜在含氧量為0.5%時之鍍膜條件下具有最佳之(0002)晶向，其電阻率約~10-3Ω-cm，薄膜載子濃度介於1020~1021 cm-3 之間，霍爾遷移率可達1~5cm2/Vs。此電晶體在400~700 nm可見光範圍之平均透光率約~81.3% ，電晶體元件之載子移動率μsat約1~1.5 cm2/Vs，開關電流比約 105~106，以及漏電流10-10 A。期能符合透明薄膜電晶體元件應用於平面顯示器的需求。

關鍵字

透明半導體薄膜，射頻濺鍍。

並列摘要

In this thesis, the transparent thin-film-transistor with ZnO thin films was fabricated. To deposit ZnO film, RF-magnetron sputtering was used with the different Ar:O2 gas flow, power, and working pressure. Then, the sample was annealing with different temperature. The material and electrical characterizations were performed by four-point-probe measurement, Hall-effect measurement, XRD analysis, spectrophotometer, and HP4156 semiconductor parameter analysis.
The ZnO thin film depositied with the O2(0.5%) flow ratio exhibits the optimum (0002) orientation. The resistivity of ZnO thin film is around ~10-3 Ω-cm and the Hall measurements indicates that the carrier concentration of ZnO film was between 1020~1021cm-3, and the corresponding electron mobility was about 1.0~1.5 cm2/Vs, respectively.
The device shows an average transmission (λ=400~700nm) of 81.3%, the saturation mobility μsat=1.0~1.5cm2/Vs, on-off ratio ~106, and the leakage current around 10-10A. The transparent thin film transistors can be suitable for the future flat panel display applications.

並列關鍵字

transparent semiconductor film，RF-magnetron。

參考文獻

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[1.4] Cherie R.Kagan and Paul Andry, “Thin Film Transistors,” MAECEL DEKKER , pp.161~164 (2001).

[1.5] T. Serikawa, S. Shirai, A. Okamoto, and S. Suyama, “Study of key technological processes to achieve ZnO p-n junction,” IEEE Trans. Electron Devices, pp. 1929-1933, (1989) 36.