模擬研究n層結構特性對非晶矽薄膜太陽電池之影響

Simulation Study of n-layer electrical properties in the Performance of Amorphous Silicon thin-film solar cells

徐竫媛(Chin-Yuan Hsu)

指導教授 ： 林佑昇

國立暨南國際大學/科技學院/光電科技碩士學位學程/碩士(2012年)

https://doi.org/10.6837/NCNU.2012.00162

摘要

本論文以美國賓州大學開發的AMPS-1D軟體數值分析n層電氣特性於非晶矽pin單接面薄膜太陽電池元件表現探討，研究方向包含非晶矽與微晶矽n層、摻雜濃度、薄膜厚度與缺陷分佈。研究中發現元件採用微晶矽n層比起非晶矽n層的轉換效率來得高；當厚度固定時，摻雜濃度越高，元件的短路電流和轉換效率提昇顯著；當摻雜濃度固定時，厚度越薄，元件的短路電流越高；當缺陷分佈逐步提高時，元件的短路電流與轉換效率隨之降低，觀察電流電壓曲線也發現呈現扭曲失效現象，歸咎原因為n層的高缺陷使得光生成載子在i/n界面區域被復合。綜合上述的模擬結果，本研究試圖找出n層的最佳化參數，施於元件的最佳化高轉換效率的表現。模擬結果也與工研院綠能所太陽光電組所開發的非晶矽薄膜太陽電池實際元件做比較，驗證本論文模擬的最佳化萃取參數於實際元件所表現的可信度。

關鍵字

太陽電池 ； 數值模擬 ； 微晶矽層

並列摘要

The main purpose of this thesis is to find the optimized n-layer parameters of amorphous silicon (a-Si) pin-type single junction thin-film solar cells. AMPS (Analysis of microelectronic and photonic structure device simulation program)-1D model developed at Penn State University is used to study n-layer electrical properties of the performances of the devices. Investigations of the n-layer properties include n-type amorphous Si (n-a-Si), n-type microcrystalline Si (n-μc-Si), doping concentration, thin film thickness and mid gap defect density. The obtained results show that using n-μc-Si layer of a-Si thin-film solar cells achieved higher conversion efficiency compared with an n-a-Si layer of solar cells. When the n-layer thickness was fixed, the short-circuit current density and conversion efficiency increased with doping concentration increase. In contrast, when the n-layer doping concentration was fixed, the short-circuit current density increased with n-layer thickness decrease. Moreover, when the n-layer mid gap defect density gradually increased, the short-circuit current density and conversion efficiency substantially decreased due to high defects of n-layer caused by the capture of photo generated carriers and recombination at the i/n interface region. Based on these simulation results, this study aimed to find the optimization parameters of the n-layer. In addition, the simulation results were compared with the measured data of solar cells provided by GEL/ITRI. The findings indicate that the simulated data conform well to the measured data.

並列關鍵字

Solar cells ； Simulation ； Microcrystalline Si

參考文獻

[1] National Center for Photovoltaics, National Renewable Energy Laboratory website page：http://www.nrel.gov/ncpv/images/efficiency_chart.jpg

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