以壓印轉移製作之氧化銦雙閘極離子感測電晶體

In2O3 Double Gate Ion-Sensitive Field-Effect Transistors Fabricated by Imprinting Transfer

王文廷(Wen-Ting Wang)

指導教授 ： 陳建亨

國立暨南國際大學/科技學院/電機工程學系/碩士(2022年)

https://doi.org/10.6837/ncnu202200010

摘要

本論文研究溶膠凝膠氧化銦之轉移壓印技術，製作氧化銦奈米線與蜂巢狀的結構，並配合傳統微影製程製作氧化銦雙閘極離子感測器，利用雙閘極間電容耦合效應和奈米線與蜂巢狀的結構，製作出高靈敏度的離子感測電晶體。
研究結果顯示，利用溶膠凝膠和壓印轉移技術可以成功製作出氧化銦奈米線與蜂巢狀結構，其線寬最小可達~158 與~89nm，並成功製作氧化銦雙閘極離子感測器電晶體，靈敏度最高可達−218 mV⁄pH，預計放大係數可達 2.7~13.6，該技術未來將可以應用在生化感測器與穿戴式裝置元件的製作上。

關鍵字

轉印 ； 溶膠凝膠 ； 氧化銦 ； 雙閘極離子感測器

並列摘要

This work focus on the pattern transferring of sol-gel indium oxide by nanoimprint technology. The nanowire and honeycomb structures and the double-gate ion sensitive field-effect transistors were fabricated. With the capacitive coupling effect and the nanowire/honeycomb structures high-sensitive DG ISFETs can be achieved.
The results showed that the nanowires and honeycomb structures with the line width of ~158 and ~89nm were fabricated successfully. The sensitivity and AF of DG ISFETs were about −218 mV⁄pH and 2.7~13.6. This technique will be suitable for the future biochemical sensors and the wearable elements applications.

並列關鍵字

Transfer Printing ； sol-gel ； In2O3 ； DG ISFETs

參考文獻

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