蜂巢狀通道結構之離子感測場效電晶體研究

The Study on ISFETs with Honeycomb Channels

曾士綸(Shih-Lun Tseng)

指導教授 ： 陳建亨

國立暨南國際大學/科技學院/電機工程學系/碩士(2019年)

https://doi.org/10.6837/ncnu201900232

摘要

本研究將整合半導體的奈米壓印技術、薄膜成長、黃光微影、蝕刻以及金屬化等製程，在傳統的離子感測場效應電晶體通道上製作出蜂巢狀奈米線結構，製作出具有蜂巢狀奈米線結構通道之離子感測場效應電晶體，並利用單分子自主裝層改變感測薄膜表面特性，製作高感測靈敏度的感測元件。

　　研究結果顯示，利用奈米壓印可成功製作出蜂巢狀結構。並將此結構運用於離子感測場效電晶體通道上時，可製作出線寬200nm，深度80nm之蜂巢狀結構通道之離子感測場效電晶體。由量測結果可發現，具有蜂巢狀結構通道之離子感測場效電晶體在感測上，相較於傳統結構或直線結構之離子感測場效電晶體，具有較高的感測靈敏度，其感測靈敏度可達到60mV/pH，並且有較低的遲滯現象，其遲滯改善後可達到1.7mV。此結構未來可運用於生物分子感測器上，並預期能有良好的感測特性。

關鍵字

離子感測場效應電晶體 ； 蜂巢狀奈米線通道 ； 自組裝層 ； APTES

並列摘要

In this work, the ion-sensitive field-effect-transistors (ISFETs) were fabricated by CMOS and MEMS process. The honeycomb nanowires were fabricated by nano imprint lithography (NIL) and the APTES/SiO2 stacked sensing membrane was applied to improve the sensing properties.

As the results, the honeycomb channels with width about 200 nm and depth about 70 nm were successfully fabricated on ISFETs by nano-imprint lithography technique. The sensing properties of ISFETs with honeycomb channels were all higher than traditional ISFETs. The sensitivity was about 60 mV/pH and the hysteresis was about 1.7 mV. This technology will be suitable for the future bio-sensing applications.

並列關鍵字

ISFETs ； SAMs ； APTES ； Honeycomb Nanowires Channel

參考文獻

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