毫米波CMOS電感器之研究

Study of Milimeter-wave CMOS Inductor

吳嘉浤(Chia-Hung Wu)

指導教授 ： 林佑昇

國立暨南國際大學/科技學院/光電科技碩士學位學程/碩士(2012年)

https://doi.org/10.6837/NCNU.2012.00201

摘要

我們嘗試在電感下方加上遮蔽圖案來探討被動元件特性，並企圖找出適合應用在毫米波低雜訊放大器之最佳化電感，以改善電路特性。這次晶片共有28組電感進行量測，電感的遮蔽圖案分別有金屬層、P+矽層、多晶矽層三大類，每一類包含網格密度有0％、12.5％∼87.5％、100％和STD、Through、Shot、open 共28組電感，分別量測Q-peak . Q-ava . Reff . Leff . NFmin . NF-ava . GAmax . fSR 8種量測值。
論文的第一部份是討論損耗分析和品質因數的影響，損耗分析因為在金屬螺旋線組成的串聯電阻。這種阻力來自兩部分組成：一是由於低頻電阻係數在金屬和另一個產生集膚效應在高頻率的影響。在低頻時，電感的串聯電阻，有助於金屬軌道電阻。在標準的CMOS製程，最上層金屬的導電性因為其厚度增加高於其他金屬層；在高頻時，電流愈靠近導體周圍流動，此乃導因在更高頻時，導體中心的inductive reactance增大，強迫電流流向周圍。所以，真正可用的導體面積縮小，導致電阻值增加，損耗增加。品質因數是在一個電感或電容被認為是自激振盪時的最大磁場能量和最大存儲電能的存儲都是相等的。因此，電感或電容的Q值消失在自激諧振頻率為零。在自我高頻上述的頻率，無磁（電）能量是從一個電感（電容）提供給任何外部電路。
論文第二部份是在元件寄生效應去除(de-embedding)討論，介紹Open-Short De-Embedding Method、Open-Through De-Embedding Method、Transmission Line Method三部份的等效電路及佈局圖。
論文第三部份是介紹電感裡的Mesh Density分別有polysilicon, P+silicon and Metal_1三種不同密度,而密度範圍在12.5%~87.5%之間。分別量測Q-peak . Q-ava . Reff . Leff . NFmin . NF-ava . GAmax . fSR 8種量測值。

關鍵字

圖案接地保護層 ； 電感 ； 晶片上元件特性反嵌入法 ； 品質因數 ； 損耗分析

並列摘要

We try to couple totem-sheltered inductor below to explore the characteristics of passive components and attempted to find the optimized inductor suitable for applications in the millimeter-wave low noise amplifier, which improving the characteristics of the circuit. This research processes measurement using 28 groups’ inductors. The totem-sheltered of inductor are metal1 layer, P+silicon layer and polysilicon layer, and each layer contains a grid density of 0%, 12.5% to 87.5%, 100% and STD, thm, Shot, open, a total of 28 groups of inductor, used to measure 8 measured values of Q-peak Q-ava Reff. Leff. NFmin NF-ava. GAmax. fSR.
Firstly, we discuss the impact of the loss analysis and quality factor. Loss analysis is series resistance formed by metal spiral. The resistance comes from two parts: the impact of low-frequency resistivity in the metal and skin effect in high frequencies. At low frequencies, the series resistance of inductor contributes to the metal orbit resistance. The top-level metal conductivity is higher than the others due to an increase in the thickness in a standard CMOS process. At high frequencies, the current flows closely to the conductor around because the inductive reactance of conductor’s center increases, which forcing current to flow around in more high frequencies. Therefore, really available conductor area is reduced which leading to the increasing of resistance value and loss. Quality factor is an inductor or capacitor considered to be equal in the maximum magnetic energy and the maximum storage of electrical energy storage when they are in the self-excited oscillation. Therefore, the Q of inductor or capacitance disappears when the self-resonant frequency is zero. In Self-high-frequency above the frequency, non-magnetic (electric) energy supplies to any external circuit with an inductor (capacitor).
Secondly, we discuss the Discussion of De-Embedding Technique for On-Wafer Device Characterization, which intrudes the equivalent circuit and layout chart of Open-Short De-Embedding Method, Open-Through De-Embedding Method and Transmission Line Method.
Thirdly, we induces Mesh Density conducted in inductor which formed by three different densities: polysilicon, P+silicon and Metal_1, and the range is between 12.5% and 87.5%. Figure 1 shows the scale of Poly, Oxide and Metal_1 which measuring Q-peak, Q-ava, Reff, Leff, Nfmin, NF-ava, Gamax and fSR, respectively.

並列關鍵字

pattern ground shield ； inductor ； Discussion of De-Embedding Technique For On-Wafer Device Characterization ； loss analysis ； quality factor

參考文獻

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