60GHz升頻混波器之設計與實現

本論文主要以台積電90奈米1P9M射頻CMOS製程來實現三個60GHz升頻混波器。研究主題分成了以下三個部份: 第一部份為60GHz升頻混波器使用雙平衡式混波器為主體架構，並且以Marchand巴倫(Balun)來達到LO輸入端的單端轉雙端與RF輸出端的雙端轉單端之功用，另外使用PMOS負電阻補償技術來提升轉換增益。使用台積電90奈米1P9M射頻CMOS製程來實現。第二部份為57GHz~64GHz升頻混波器除了沿用第一部份所使用的電路架構，另外又採用了NMOS負電阻補償技術來配合PMOS負電阻補償技術，使其能夠提升轉換增益之外，亦能降低功率損耗。以台積電90奈米1P9M射頻CMOS製程來實現。第三部份為57GHz~64GHz升頻混波器，目的是改善第一部份的轉換增益與其3dB頻寬，並且在轉導級增加一對NMOS對來改善與彌補因為提升增益而損失的IF頻寬。使用台積電90奈米1P9M射頻CMOS製程來實現。

關鍵字

60GHz ；升頻混波器； Marchand巴倫；負電阻補償技術；轉換增益

並列摘要

This thesis mainly utilizes TSMC 90nm 1P9M RF CMOS process technology to implement three 60GHz up-conversion mixers. The thesis is composed of three sections: In the first section, a 60GHz up-conversion mixer makes a double-balanced mixer as the main structure. With the Marchand balun, it can transfer a single-ended port to double-ended ports at the input of the LO port, and it also can convert double-ended ports to single-ended port at the output of the RF port. In addition, the dynamic current technique is used to increase the conversion gain. To implement the structure with the TSMC 90nm 1P9M RF CMOS process technology. The second section is about a 57GHz ~ 64GHz up-conversion mixer, which is used with the structure of the first section. Besides, using the NMOS negative-resistance compensation technique to act in concert with the dynamic current technique to increase the conversion gain and decrease the power consumption. Applying the TSMC 90nm 1P9M RF CMOS process technology to implement the structure is the best choice. The third section is about a 57GHz ~ 64GHz up-conversion mixer, and the purpose is to improve the conversion gain and the 3dB bandwidth of the first section. And to apply with another NMOS pair in the transconductance-stage to improve and recuperate the IF bandwidth when the conversion gain increases. To implement the structure with the TSMC 90nm 1P9M RF CMOS process technology.