高介電常數材料對并五苯之有機場效電晶體效能的影響

Influences of High-k Gate Dielectrics on the Performance of Pentacene-base Organic Field-effect Transistors

康柏彥(Bo-Yan Kang)

指導教授 ： 郭明裕

國立暨南國際大學/科技學院/應用化學系/碩士(2013年)

摘要

有機場效電晶體近年來在日常生活應用廣泛，在元件越作越小之時，閘極的氧化層厚度也跟著越做越小，傳統的二氧化矽能提供的厚度已經不足以阻擋漏電流，因此需要開發高介電材料，取代傳統二氧化矽，使其元件更為縮小為本實驗目的。
傳統以SiO2為介電層材料其C值為10 nF/cm2，本篇選用多種High-K材料其中又以ErTixOy這個材料有最高的電容值240 nF/cm2應有不錯的電性表現。

本篇主要研究以不同的高介電常數之介電層，利用不同的自組裝單層膜修飾後，探討其電性之影響，首先將介電層為TiO2、Al2O3、Ho2O3、GdOx、EuOx、ErTixOy、Sm2O3長上不同的自組裝單層，再經由真空蒸鍍方式沉積Pentacene有機薄膜，利用原子力顯微鏡(AFM)，電性量測系統探討薄膜形貌以及電性效能分析。最後結果顯示，在不同介電層材料與其不同的退火溫度時，其成膜特性也不會一樣；當使用退火溫度200 ℃之Sm2O3作為介電層，從AFM可得知其連續性佳，且擁有最佳載子傳輸率3 cm2/Vs。

關鍵字

有機場效電晶體 ； 高介電常數材料

並列摘要

Organic field effect transistors have been applied widely in recent years. For the development of the semiconductor industry, there is a tendency to reduce the size of device, thinner dielectric layer can afford higher capacity and reduce the control of gate. Investigating High-k gate dielectrics is a important issue to improve whole performance.
Traditionally dielectrics material use SiO2,it’s capacity is 10 nF/cm2, in this study we choose many High-k materials, among these material ErTixOy have the highest capacity 240 nF/cm2 should be a good performance.
In this study, we use different dielectric material, and use different SAMs to modify the dielectric surface, and discussed the performance. First we use TiO2, Al2O3, Ho2O3, GdOx, EuOx, ErTixOy, Sm2O3 as the dielectric material and use different SAMs to modify, and then deposited Pentacene on the device, and prob into the surface and mobility by atom force microscope(AFM).
Finally the result indication,when in the different material and different annealing temperature, the film characteristics will be different;at the 200 ℃annealing temperature Sm2O3 be the dielectric material have the best mobility 3 cm2/Vs, at the AFM data we can know the film have large grain size and small grain boundary.

並列關鍵字

Organic Field-Thin Transistor ； High-k dielectrics

參考文獻

[1] T. W. Kelley, L.D.Boardman,T. D. Dunbar, D. V. Muyres, M. J. Pellerite, T. P. Smith, J. Phy. Chem. B. 2003, 107, 5877-5811.

[2] O. Acton, Guy. G. Ting II, H. Ma, D. Hutchins, Y. Wang, B. Purushothaman, J. E. Anthony, A. K. Y. Jen, J. Mater. Chem. 2009, 19, 7929-7936.

[3] Guy. G. Ting II, O. Acton, H. Ma, J. W. KA, A. K. Y. Jen, Langmuir. 2009, 25, 2140-2147.

[4] L. A. Majewski, R. Schroeder, M. Grell, Adv. Funct. Mater. 2005, 15, 1017-1022

[5] T. M. Pan, W. T. Chang, F. C. Chiu, Thin Solid Film, 2010, 519, 923-927.