用於N型有機場效電晶體之苯並二噻吩醌型衍生物

Benzodithiophene-based Quinoidal Derivates for N-type Organic Field Effect Transistors

邱鈺紋(Yu-Wen Chiu)

指導教授 ： 郭明裕

國立暨南國際大學/科技學院/應用化學學系/碩士(2022年)

https://doi.org/10.6837/ncnu202200349

摘要

有機場效電晶體（OFET）近年來備受關注，並且已被應用於各種電子器件。但在此領域中，N-Type材料因受限於材料的空氣穩定度和載子遷移率等問題，導致其發展仍不及P-Type材料，在此本研究使用苯並二噻吩（BDT）結構作為主要材料，因其具有對稱性、剛性和π共軛體系等優點，可以增強電子的跳躍和分子之間的相互作用，進而增加載子遷移率，我們藉由引入二氰基亞甲基拉電子基團降低材料LUMO能階，並使用不同的烷氧基側鏈，成功設計合成了N-Type材料BDTCN-Cn系列的醌型衍生物。 同時我們也分析了它們的熱穩定性、光化學性質、電化學性質及元件之電性測量，LUMO能階成功達到 -4.0 eV以下，具有作為空氣穩定N-Type的條件。其中特別是BDTCN-C2C6分子在空氣下的電子遷移率高達 0.94 cm 2 V -1 s -1，是迄今為止在苯並二噻吩系列醌型衍生物中表現最為優異的，是空氣穩定N-Type有機場效電晶體的良好候選者。

關鍵字

有機場效電晶體 ； N-Type材料 ； 醌型衍生物

並列摘要

Organic field effect transistors (OFETs) have attracted much attention in recent years and have been applied to various electronic devices. However, in this field, the development of N-type materials still lags behind the P-type materials due to the limitation of air stability and charge carrier mobility of the materials. In this study, we used benzodithiophene (BDT) as the main structure because of its symmetry, rigidity and π-conjugation system, which can enhance the electron hopping and intermolecular interactions, and further increase the charge carrier mobility. BDTCN-Cn series of quinoidal derivates were successfully designed and synthesized of N-Type materials by introducing dicyanomethylene electron-withdrawing groups to lower the LUMO energy level and change different alkoxy side chains.We also analyzed their thermal stability, photochemical, electrochemical properties and OFET characteristics for devices, and the LUMO energy level was successfully achieved below
- 4.0 eV and has the conditions to be used as an air-stable N-Type material.In particular, BDTCN-C2C6 has high electron mobility of 0.94 cm 2 V -1 s -1 under ambient condition, which is the best performance among the BDT series quinoidal derivatives so far and is a good candidate for air-stable N-Type OFET.

並列關鍵字

Organic Field Effect Transistors ； N-Type materials ； Quinoidal Derivates

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