抑制矽化物生成的低溫鐵薄膜之成長與磁性研究

Growth and Magnetism of Low-temperature Deposited Fe/Si(111) Films as an Intermediate Layer for Suppression of Silicide Formation

涂文廷(Wen-Tin Tu)

指導教授 ： 林文欽

國立臺灣師範大學/理學院/物理學系/碩士(2011年)

摘要

相較於室溫成長，低溫下成長於矽基板上的鐵薄膜成功的減少了矽和鐵介面間的矽化物產生。在鐵矽介面間，5到15層低溫成長的鐵薄膜，在350K下都能夠維持穩定的狀態。同時，低溫成長的鐵薄膜其表面相當的平整，粗糙度約在0.4到0.6個奈米間。因此，低溫的鐵薄膜被用來做為一介面層，接續在室溫下繼續蒸鍍鐵薄膜。我們利用磁異相能的單一磁矩模型，來模擬矯頑場的變化，並推論和討論表面及體積異相能。

關鍵字

鐵 ； 矽 ； 磁性 ； 矽化物 ； 低溫 ； 薄膜

並列摘要

Low temperature (LT: 100 K) deposition of Fe on Si(111)7x7 surface effectively reduces Fe-silicide formation at the Fe/Si interface, as compared with conventional room temperature (RT) growth.
The interface condition of 5-15 monolayer (ML) LT-Fe/Si(111) remains stable at least up to 350 K. Si segregation was observed after annealing at 400 K.
LT-grown Fe films also reveal a relatively flat surface morphology with a roughness of 0.4-0.6 nm. Thus, LT-Fe films were suggested as an intermediate layer for the subsequent RT-growth of Fe. We use a single domain model of magnetic anisotropy to fit the magnetic coercivity evolution of n ML RT-Fe on 5 ML LT-Fe/Si(111). Accordingly, we deduce the surface and volume-contributed magnetic anisotropy for discussion.

並列關鍵字

Fe ； Si ； low temperature ； magnetism ； silicide ； film

參考文獻

[1] J.M. Gallego, J. M. Garc ia, J. Alvarez, and R.Miranda, Phys.Rev. B 46, 13339 (1992).

[2] J. S. Tsay and Y. D. Yao, Appl. Phys. Lett. 74, 1311 (1999).

[3] Z.H. Nazir, C.-K.Lo, M. Hardiman, J. Magn. Magn. Mater. 156,435 (1996).

[4] B. Ghebouli, S.-M. Ch erif, A. Layadi, B. Helifa, M. Boudissa, J.Magn. Magn. Mater. 312, 194 (2007).

[10] Stich, Phys. Rev. B 55, 5886 (1997).