氮化銦鎵量子井結構應用於太陽能電池及其特性研究

InGaN/GaN multiple quantum well solar cells grown on wet-etched patterned sapphire substrates

鄭俊茂

指導教授 ： 李亞儒

國立臺灣師範大學/理學院/光電科技研究所/碩士(2011年)

摘要

本論文中將氮化銦鎵量子井磊晶成長於圖案化藍寶石基板上來提升太陽能電池轉換效率。與傳統的太陽能電池結構比較之下，差排缺陷(threading dislocation)密度可以從1.28×109 降低至3.62×108cm2，使得太陽能電池的短路電流(Isc)提升60%。此外，氮化銦鎵量子井太陽能電池磊晶於圖案化藍寶石基板與一般的藍寶石基板其開路電壓(Voc=2.05V)與填充因子(FF=51%)幾乎相同。我們歸納元件效能的提升主要是磊晶層結晶品質的改善，其減少量子井中非輻射複合中心對光致載子的侷限效應，最終提升光致載子傳輸至元件外部的整體效率。

關鍵字

太陽能電池 ； 氮化銦鎵 ； 圖案化藍寶石基板

並列摘要

This study demonstrated the enhanced conversion efficiency of an indium gallium nitride (InGaN) multiple quantum well (MQW) solar cell fabricated on a patterned sapphire substrate (PSS).Compared to conventional solar cells grown on a planar sapphire substrate, threading dislocation defects were found to be reduced from 1.28×109 to 3.62×108cm2, leading to an increase in short-circuit current density (JSC 1.09 mA/cm2) of approximately 60%. In addition, the open-circuit voltage and fill factor (VOC=2.05 V; FF = 51%) of the solar cells grown on PSS were nearly identical to those of conventional devices. The enhanced performance is primarily due to improvements in the crystalline quality of the epitaxial layers, reducing the trapping of photogenerated electrons and holes by nonradiative recombination centers in MQW, with a corresponding increase in the transport efficiency of the carriers outside the device.

並列關鍵字

solar cell ； InGaN ； patterned sapphire substrate(PSS)

參考文獻

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