應力模擬應用於微晶矽與氧化物半導體電晶體及其電性分析

Stress Simulation and Electrical Characteristics of the Micro Crystal Si and Oxide Semiconductor TFTs

沈正都(Cheng-Tu Shen)

指導教授 ： 李敏鴻

國立臺灣師範大學/理學院/光電科技研究所/碩士(2012年)

摘要

隨著時間改變，科技也日新月異，光電產業更是如此。近年來光電產業技術蓬勃發展，但也同時代表著激烈的產業競爭，因此必須考慮到支出成本的降低，才能在供給與需求中求得獲利。在開發新設計之前，利用CAE模擬更可以減少設計成本以及縮短開發時間，所以如何設計出一個準確的CAE模擬模型是相當重要的一環。近年來攜帶式電子產品成為市場的主流，諸如Tablet PC、PDA 、Mobile Phone 等廣泛的使用到顯示面板，在輕薄的訴求下，紛紛朝向次世代顯示器發展，其中以塑膠基板為主的可撓曲面板更是大家所共同努力的方向。

針對可撓曲面板中薄膜電晶體的應力模擬與分析是本篇論文的重點。論文將改良與重建本研究團隊之前所建模擬薄膜電晶體模型。從單純垂直轉角至階梯型轉角以及二維發展至三維，並加入材料內應力;以及量測與工研院合作之薄膜電晶體電性。最後分析CAE模擬模型與實際元件量測結果。

關鍵字

應力模擬 ； 微晶矽 ； 氧化物半導體 ； 電晶體 ； 電性分析

並列摘要

Along with the time, the science and technology change each new day, and the electro-optical industry is so, especially. In recent years, the electro-optical industry’s technology is vigorous development, but it is also representing that intense industrial competition.

So, it must consider the reduction of outlay cost, in order to obtain the profit. Therefore, how to design an accurate CAE Model is a quite critical point. Recently, the portable electronic products became the mainstream in market, such as Tablet PC, PDA, and mobile phone and so on.

Because of the demand of lightweight and rugged, flexible display will play an important role in next generation display development. The simulation and analysis of thin film transistor’s reliability is key point of this paper.

We improve and remake former thin film transistor model from the perpendicular corner to the “ladder” corner as well as the 2D to 3D, and analysis the electrical characteristic of thin film transistor form ITRI.

並列關鍵字

Stress Simulation ； Micro Crystal Si ； Oxide Semiconductor ； TFT ； Electrical Characteristics

參考文獻

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[2] R. H. Chen, “Liquid Crystal Displays: Fundamental Physics and Technology,” Wiley, 2011, ch. 1

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