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  • 學位論文

氧化鉿鋯二極體與場效電晶體之記憶體應用

Hf1-xZrxO2 Diode and MOSFETs for Memory Applications

指導教授 : 李敏鴻
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摘要


具有鐵電效應的新鐵電材料-鉿基氧化物(Hafnium-based Oxides),這幾年除了研究討論度相當高之外,應用面也是相當的廣,例如其鐵電負電容特性,藉由突破次臨界擺幅的物理極限60mV/dec,降低了操作電壓VDD,間接降低了元件的耗能,達到低功耗的目的。又例如藉由鐵電特性,使電流-電壓曲線具有遲滯現象,使之可以應用在1T記憶體上面,也可以製作成MIM結構應用在1T-1C記憶體中,而且鉿基氧化物與矽基板相容性高,可以整合在現有的CMOS半導體製程上。本研究將針對於應用在鐵電記憶體上,使用Hf1-xZrxO2作為鐵電層,藉著不同物理厚度、不同摻雜比例,以及退火溫度等條件,探討分析其在記憶體應用方面的表現。 關鍵字:鉿基氧化物、負電容電晶體、次臨界擺幅、金屬-鐵電層-金屬結構、鐵電電晶體。

並列摘要


In recent years, Hafnium-based oxides, have experienced intensive studies and have already been widely application, such as FeRAM, negative-capacitance (NC) FET, and other related fields. With the application of NC-FET, by breaking through the subthreshold swing limit (60 mV/dec,) the reduction in operating voltage (VDD) can results in lower power consumption. Moreover, Hafnium-based oxides can be used 1T-1C and 1T structure memory. In this work, devices are made into MIM structure or FET to study characteristic performance by different conditions such as annealing temperatures and dopant contents. Keyword: Hafnium-based Oxide, NC-FET, subthreshold swing, metal-ferroelectric film-metal structure, FeFET

參考文獻


1. T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder and U. Böttger , “ Ferroelectricity in hafnium oxide thin films,” Appl. Phys. Lett., vol. 99, 102903, 2011.
2. J. Müller, T. S. Böscke, D. Bräuhaus, U. Schröder, U. Böttger, J. Sundqvist, P. Kücher, T. Mikolajick, and L. Frey, “Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications,’’ Appl. Phys. Lett., vol. 99, iss. 11, 112901, 2011.
3. J. Müller, T. S. Böscke, U. Schröder, S. Mueller, D. Bräuhaus, U. Böttger, L. Frey, and T. Mikolajick, “Ferroelectricity in Simple Binary ZrO2 and HfO2,” Nano Lett., pp. 4318−4323, 2012
4. T. S. Böscke, St. Teichert, D. Bräuhaus, J. Müller, U. Schröder, U. Böttger and T. Mikolajick, “Phase transitions in ferroelectric silicon doped hafnium oxide,’’ Appl. Phys. Lett., vol. 99, no. 11, 112904, 2011.
5. J. Müller, U. Schröder, T. S. Böscke, I. Müller, U. Böttger, L. Wilde, J. Sundqvist, M. Lemberger, P. Kücher, T. Mikolajick, and L. Frey, “Ferroelectricity in yttrium-doped hafnium oxide,’’ J. Appl. Phys., vol. 110, no. 11, 114113, 2011.

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