直接耦合場效電晶體邏輯中自動對準增強型場效電晶體在單石微波積體電路的應用

A Self-align Enhancement mode FET for DCFL in Monolithic Microwave Integration Circuit Application

廖繼文(Chi-Wen Liao)

指導教授 ： 譚仕煒

健行科技大學/電資學院/電機工程所/碩士(2009年)

https://doi.org/10.6824/UCH.2009.00006

摘要

由於無線通訊及光纖通訊的急速發展，頻寬的不足一直都是存在的問題，因此元件朝更高頻率響應的方向走是一致的趨勢。近年來，高摻雜異質場效電晶體(HDCFETs)廣泛的被使用在微波元件及高速元件上，由於擁有較高的電流密度及較佳的微波特性和良好的Schottky gate特性和熱穩定的性能，所以會如此的受到重視。在本論文中，我們推演出DD模型測量方法來量測同質接面和異質接面在不同的週遭溫度下的電特性並成功地利用DD模型計算出擴散電流和復合電流密度的成分和描繪偏壓下的p-n接面的電流-電壓特性曲線並從中可證明異質接面的復合中心濃度比同質接面高。利用上述觀念，我們使用HDCFETs磊晶結構避免掉複雜的製程方式利用自我對準的方法提高其元件的特性，並成功將增強型和空乏型元件製作在相同結構上，應用在直接耦合場效電晶體邏輯電路中。其研究成果對微波元件及高速元件的研究發展能夠提供極具參考價值。

關鍵字

高摻雜異質場效電晶體 ； 自我對準 ； 直接耦合場效電晶體邏輯

並列摘要

Because the wireless communication and the optical fiber communication's development rapidly, the bandwidth insufficiency has been the existence question, therefore the part walks toward the high-frequency response's direction is the consistent tendency. In recent year, doped-channel heterostructure field-effect transistors (DCFETs) with a high current density and superior microwave power performance was developed and characterized and Schottky gate performance and thermal stability, it has been widely investigated for microwave power devices and high-speed devices. In the paper, we success fabrication DD model of both p-n heterojunction and were investigated at different ambient temperatures. The DD model together with a numerical method that could be used to extract the parameters has described well the characteristics of the proposed p-n junction under forward bias. According to fore-mentioned, we demonstrate simple that a doped-channel field-effect transistor HDCFET structure, using an additional p+-GaAs cap layer and self-aligned, simultaneously obtains both p-n junction and Schottky junction to fabricate the enhancement mode and depletion mode of HDCFET (EHDCFET and DHDCFET) on the same chip, thus implementing direct-coupled field effect transistor logic (DCFL) circuit.

並列關鍵字

HDCFET ； Self-align ； DCFL

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