本論文是根據受挫式全反射法及Kretschmann組態激發表面電漿波對含水的四氧化矽之研究。藉由不同厚度的金、銀、銅薄膜層進行模擬;待測物層分別是二氧化矽和氯化氫。 研究結果得知:二氧化矽在金薄膜厚度37.5nm、銀薄膜厚度49nm、銅薄膜厚度34nm;氯化氫在金薄膜厚度37nm、銀薄膜厚度49nm、銅薄膜厚度33.5nm時,有最佳化的表面電漿波共振角。 表面電漿波利用得到的最佳薄膜厚度及共振角時,表示感應到該物質是否出現在環境中。
This research is based on frustrated total internal reflection and Kretschmann configuration measurement of excited surface plasma waves to study the water-containing silicon tetraoxide. Simulation is carried out by thin film layers of gold, silver and copper with different thicknesses; the layers to be tested are silicon dioxide and hydrogen chloride, respectively. The results of this paper are: Silicon dioxide in gold metal film thickness 37.5 nm, Silver metal film thickness 49 nm, Copper metal film thickness 34 nm; Hydrogen chloride in gold metal film thickness 37 nm, Silver metal film thickness 49 nm, Copper metal film thickness 33.5 nm, there is optimization surface of the surface plasma wave resonance angle. The surface plasma wave uses the best film thickness and resonance angle to indicate whether the substance is detected in the environment.