利用光受挫內部全反射法激發表面電漿波於砷化鎵太陽能電池之研究

本論文是利用光受挫式內部全反射方法來激發表面電漿波，根據Otto組態與Kretschmann組態來做變化，第一層為稜鏡，第二層為金屬，第三層為二氧化矽，第四層為砷化鎵，第五層為金屬做為本論文研究組態。由於二氧化矽、砷化鎵與各種金屬之介電常數皆不相同，可在激發表面電漿波時，靈敏地辨別不同厚度之共振角度與吸收的深度。在研究中首先利用表面電漿波理論推導出本研究之五層反射率公式，再進行電腦模擬。電腦模擬時針對金屬、二氧化矽、砷化鎵在不同厚度時所產生的表面電漿波做分析與比較，藉由分析表面電漿波找出共振角與最佳的吸收度。電腦模擬是依據所設計的實驗架構圖來模擬，用平行光束做為激發表面電漿波的入射光源，及利用旋轉平台的旋轉改變入射光擊入稜鏡的角度；此會影響測量出來的反射光強度大小，藉由電腦儲存反射光強度的變化數據進行分析研究。

關鍵字

光受挫全內部反射；表面電漿波(SPW) ； Otto組態； Kretschmann組態；砷化鎵太陽能電池

並列摘要

This paper is the use of frustrated total internal reflection method to stimulate surface plasma waves, according to Otto and the Kretschmann configuration to make configuration changes, the first layer for the prism, the second layer of metal, the third layer is silicon dioxide, the fourth layer for gallium arsenide, the fifth layer of metal as the configuration of this thesis research. As the silicon dioxide, gallium arsenide with a variety of metals have not the same dielectric constant, can stimulate surface plasma waves, the sensitivity to identify the perspective of different thickness and absorption of the resonance depth. First of all, in the study urface plasma waves using the theory derived from this study the formula of five-reflectivity, a further computer simulation. Computer simulation for the metal, silicon dioxide, gallium arsenide by the different thickness of surface plasma waves generated by analysis and comparison done by analysis of surface plasma waves to find the best angle and resonance absorption. Computer simulation is based on experiments designed to simulate the structure plan, with parallel beams stimulate surface plasma waves as the incident light source, and the use of rotation stage to change the rotation of the incident light into the prism angle of attack; this will affect the measurement of the reflected light from strength of the size of computer storage through changes in reflected light intensity data analysis.