此研究是透過在室溫下射頻磁控濺鍍法,在PES基板上濺鍍無銦ZZO/Ag/ZZO多層膜(ZZO為摻Zr 之ZnO),ZZO/Ag/ZZO多層膜之光電特性可藉由在頂層與底層ZZO薄膜中間加入最佳厚度之Ag 中間層來改善。由於非常低的電阻率,此 ZZO/Ag (12 nm)/ZZO/PES多層膜展現出~85.6%的高透光率(波長範圍從450nm到600nm),和低電阻率( 6 x 10-5 Ω.cm)。此外,XPS證實此ZZO/Ag/ZZO多層膜之ZZO跟Ag層無界面反應,此特性顯示出此ZZO/Ag/ZZO多層膜在低成本可繞式光電應用上作為透明導電薄膜是很有潛力的。
In this study, the optical, electrical, and structural properties of indium-free Zr-doped ZnO (ZZO)/Ag/ZZO multilayers prepared on poly(ether sulfone) (PES) substrates by RF magnetron sputtering at room temperature. The optical and electrical characteristics of the crystalline ZZO/Ag/ZZO multilayer electrodes can be improved by the insertion of a nano-sized Ag interlayer with an optimized thickness between top and bottom ZZO films, owing to the very low resistivity. The ZZO/Ag (12 nm)/ZZO/PES exhibited high transmittance of ~85.6% in the wavelength range from 450 to 600 nm and a low resistivity of ~6 x 10-5 Ωcm . Additionally, X-ray photoelectron spectroscopy (XPS) investigations for the ZZO/Ag/ZZO multilayers confirmed no interfacial reaction between the ZZO and Ag films. The performances indicate that the indium-free ZZO/Ag/ZZO multilayers are promising as transparent conducting films for low-cost flexible optoelectronics applications.