- 學位論文
利用AFM掃描探針微影術於矽材料表面製作奈米結構之研究
Study on Fabricating Nano-structure for Silicon Material Using AFM Scanning Probe Lithography
摘要
本論文主要是將原子力顯微鏡微影術應用於單晶矽表面上製作出奈米尺度的氧化結構圖案。而實驗首先利用田口方法找出影響奈米氧化加工之主要製程參數，再藉由全因素實驗進一步求出這些奈米氧化加工主要製程參數與氧化結構圖案間之關係，並求得經驗公式。 實驗結果顯示，原子力顯微鏡微影術對奈米氧化結構寬度的主要影響參數有氧化偏壓及相對濕度兩項；對奈米氧化結構高度的主要影響參數則是氧化偏壓及掃描速度兩項，同時發現接觸力對氧化結構的寬度有較大影響，對奈米氧化結構的高度影響較小。另外也發現於原子力顯微鏡之氧化加工中，若氧化偏壓愈大且掃描速率愈慢，在高相對濕度下所造成的奈米氧化結構半高寬會愈寬，高度會愈高。
並列摘要
This study is employed atomic force microscopy to construct the pattern of nano-oxidized structure pattern on the surface of the mono crystalline silicon. The first step of this experiment is application of the Taguchi Method to find out the major parameters that influence the process of manufacturing the nano-scaled oxidization. Then we will find the relationship between the major process parameters of manufacturing the nano-scaled oxidization and the oxidized structure pattern by full-factorial method and induce the empirical formula in final. The results of Taguchi method experiment are show that atomic force microscopy has two main influencing factors for the width of the nano-scale oxidized structure. One is oxidate bias, and another is scanning speed. And they are also the main influencing factors for the height of the nano-scale oxidized structure. The contact force has more influence on the width than the height of the oxidized structure pattern. We also find the FWHM of the nano-scale oxidized structure more wider and more higher when the oxidate bias increasing and scanning speed decreasing under the higher relative humidity.