ITO表面處理與緩衝層對有機電激發光二極體特性之研究

The study of organic light emitting diodes by surface treatment of indium tin oxide and buffer layer.

許宗琦(Hsu-Tsung Chi)

指導教授 ： 張慎周

崑山科技大學/工程學院/電機工程研究所/碩士(2004年)

https://doi.org/10.6828/KSU.2004.00057

摘要

在本篇論文中，我們選用了兩種絕緣材料SiO及ZnO來當陽極的緩衝層，主要探討這兩種材料對元件特性的影響，再探討電漿處理後ITO表面對元件特性改變情形。
實驗結果得知SiO及ZnO來當陽極的緩衝層最佳的厚度分別為1nm及2nm，介電值為 0.8203及0.6828 ，顯示出絕緣材料當陽極緩衝層時介電質較大者，在比較薄的厚度便可以達到平衡電子電洞注入的效果，達到提升元件的亮度及效率，而且元件壽命更長。另外電漿處理ITO表面，則以10分鐘得到最佳條件，ITO玻璃除了一般的有機溶液的清洗，利用電漿處理則可以將表面的污染物去除乾淨，並且降低OLED元件的啟動電壓。

關鍵字

緩衝層 ； 有機發光二極體

並列摘要

In this thesis, SiO and ZnO are used to as the anode buffer layer. We studied the effect of them on the characteristics of organic light emitting diodes (OLEDs). The improvement of OLEDs by O2-plasma treatment on indium-tin-oxide is also studied.

When the thickness of SiO and ZnO is 1nm and 2nm, respectively. The performance of OLEDs is better. The dielectric constant of SiO and ZnO is 0.8203 and 0.6828, respectively. It indicates that the insulation ability of SiO buffer layer is batter than that of ZnO. It suggests the buffer layer with a higher dielectric constant can improve OLED performance in a thinner thickness. For O2-plasma, 10min treatment is an optimum in our experiment The O2-plasma treatment can remove ITO surface contamination and then reduces the contact angle and turn-on voltage.

並列關鍵字

OLED ； buffer layer

參考文獻

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