BaTi4O9與Ba2Ti9O20微波介電陶瓷之直接燒結製程

BaTi4O9 and Ba2Ti9O20 Microwave Dielectric Ceramics by a Direct-Sintering Process

曾科豪(Ko-Hao Tseng)

指導教授 ： 劉依政

崑山科技大學/工程學院/電子工程研究所/碩士(2006年)

摘要

本研究以直接燒結製程製備BaTi4O9與Ba2Ti9O20微波介電陶瓷，並分別添加0.1wt％MnO2、0.2wt％ZrO2或0.5wt％CuO來改善微波介電特性與降低燒結溫度。直接燒結混合原料即可獲得單相的BaTi4O9與Ba2Ti9O20相，且密度皆可達理論密度之97％以上。BaTi4O9在1280℃燒結4小時有最佳微波特性，εr=37.4、Q×f =44,600 GHz、τf =5.7 ppm/℃，而Ba2Ti9O20於1280℃燒結6小時εr=38.2、Q×f =39,300 GHz、τf =0 ppm/℃。添加MnO2於BaTi4O9與Ba2Ti9O20可有效提高Q×f值，分別有微波介電特性：εr=37.1、Q×f =51,200 GHz、τf =0 ppm/℃及εr=38.05、Q×f =34,400 GHz、τf =3.9 ppm/℃。添加ZrO2於BaTi4O9與Ba2Ti9O20可分別獲得微波介電特性：εr=36.2、Q×f =45,800 GHz、τf =0 ppm/℃與εr=37.88、Q×f =39,700 GHz、τf =5.9 ppm/℃。而添加CuO於BaTi4O9與Ba2Ti9O20可成平飢C燒結溫度，分別於1100℃與1150℃可獲得最佳微波介電特性：εr=37.5、Q×f =43,200 GHz、τf =0 ppm/℃與εr=34.09、Q×f =27,300 GHz、τf =0 ppm/℃。

關鍵字

微波介電陶瓷 ； Ba2Ti9O20 ； BaTi4O9 ； 直接燒結

並列摘要

BaTi4O9 (BT4) and Ba2Ti9O20 (B2T9) microwave dielectric ceramics produced by a direct-sintering process were investigated. 0.1wt% MnO2, 0.2wt% ZrO2 or 0.5wt% CuO were added individually to improve the properties of BT4 and B2T9. Without any calcination involved, pure BT4 and B2T9 phases could be obtained successfully after sintering the pellets of mixture of oxides. Pellets with >97% of theoretical density could be produced. With CuO addition, the sintering temperature was reduced to 1100℃ for BT4 and 1150℃ for B2T9. εr =36.6-37.5, Q×f =43,200-51,200 GHz and τf = 0-5.9 ppm/℃ for B2T9 were found.

並列關鍵字

BaTi4O9 ； Direct-Sintering ； Microwave Dielectric Ceramics ； Ba2Ti9O20

參考文獻

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