Ⅲ-Ⅴ族化合物太陽能電池之所以可以達到高的效率,在於它可以將不同能帶的Ⅲ-Ⅴ族材料做推疊,分別將不同光譜做最有效的吸收,這種推疊的形式稱為串接(Tandem)結構,在兩層串接結構中是由上層電池(Top Cell)、底層電池(Bottom Cell)、基板組合起來,而三層就有上層電池(Top Cell)、中間電池(Middle Cell)、底層電池(Bottom Cell)、基板,其中每一層都可以當作一顆獨立的電池,以多層串接的方式即可達到高效率。 目前高效率的Ⅲ-Ⅴ族化合物太陽能電池之上層電池(Top Cell)由磷化鎵(GaInP)為主要材料,在本論文中利用與它能帶相似的磷鋁銦鎵(AlGaInP)先做單層結構研究與探討,主要透過在磊晶與製程上的改變,分別提升磷鋁銦鎵(AlGaInP)單層太陽能電池之轉換效率,未來運用在多層串接結構上可將磷化鎵(GaInP)替換之。
The Ⅲ-Ⅴcompound solar cells can get high efficiency as a result of structure of tandem and we also call tandem solar cell, it compose of different band–gap compound semiconductor and it absorb spectrum of solar , respectively . it compose of top cell . bottom cell and substrate in the two layer structure of tandem . By the three layers , it compose of top cell . middle cell . bottom cell and substrate . Structure of tandem can supply efficiency from each cell , so it can get high efficiency . Material of top cell usually compose of GaInP , in this paper , we use AlGaInP to substitute for GaInP and we optimize the epitaxy and process conditions of AlInGaP top cell in order to get max efficiency .