低溫下濺鍍成長AZO/Cu/AZO薄膜及氫電漿處理之特性研究

The properties of AZO/Cu/AZO films deposited by sputtering and post hydrogen plasma treatment at low temperature

林政頤(Cheng-Yi Lin)

指導教授 ： 林天財

崑山科技大學/工程學院/電機工程研究所/碩士(2012年)

摘要

本研究利用射頻磁控濺鍍成長AZO/Cu/AZO三層薄膜在塑膠與玻璃基板上，藉由改變夾層Cu厚度而獲得薄膜最佳光電特性，接著藉由氫電漿熱處理改善薄膜之光電特性。
由實驗結果得知，有了底層的AZO三層結構的AZO/Cu/AZO，更容易成長出高品質的夾層Cu，有了品質好的夾層，也能助於AZO薄膜繞射峰（002）的成長，但AZO及Cu薄膜的厚度也會影響到薄膜表面的粗糙度及光穿透率，故當AZO射頻功率130W、沈積時間13min、Cu射頻功率40W、100sec時，玻璃最佳片電阻值439Ω/sq、PC基板片電阻值為900Ω/sq、PET基板片電阻值為876Ω/sq，平均光穿透率86％。
氫電漿熱處理方面，本實驗利用改變射頻功率改變不同處理時間，隨著處理時間的增加，薄膜皆有明顯的改善其光電性質，其玻璃基板片電阻值由未處理的77kΩ/sq降低至3.55kΩ/sq、平均光穿透率由未處理的81%提高至91%。

關鍵字

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並列摘要

In this study, we used RF magnetron sputtering to grow AZO/Cu/AZO tri-layer films on plastic and glass substrates. The films were processesd by changing Cu thickness to get appropriate properties of films. After deposition, the sample were treated in hydrogen plasma in order to improve the films properties such as transmittance and resistivity.
According to the experiment results, the tri-layer AZO/Cu/AZO structure have an underlayer of AZO which enhance to grow high quality Cu interlayer.The high gualily Cu interlayer will produce high intensity(002)AZO growth. The thickness of AZO and Cu films slightly affect films surface roughness and transmittance. The best properties of films with sheet resistance of 439Ω/sq, on glass 900Ω/sq on PC and 876Ω/sq on PET were obtained. The average transmittance on glass is 86%. The process condition was carried out at AZO power of 130W, deposition time of 13min, Cu power of 40W and deposition time of 100sec.
In hydrogen plasma treatment, we used RF power as plasma source and changing treatment time. The films properties were improve by increasing treatment time, therefore the sheet resistance was reduce from 77kΩ/sq to 3.55kΩ/sq, and the average transmittance increase from 81% to 91%.

並列關鍵字

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參考文獻

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