本論文針對銅製程電鍍的均勻度與厚度作為研究的方向,銅製程電鍍的均勻度與厚度所影響的是晶圓片的良率問題,也因此在銅製程裡均勻度與厚度是半導體銅製程所注重的一環,本論文是針對硬體方面會影響均勻度與厚度的因素來做為研究,均勻度與厚度兩者是息息相關的,改善這兩者的問題可以大大的提升晶圓片銅製程電鍍的良率。 針對銅製程電鍍的均勻度與厚度,本論文提出六個影響均勻度與厚度的相關因素來做為探討,分別是電鍍槽的大小、電鍍時晶片與陽極的高度、中心位置對晶片的影響、電鍍水平對晶片的影響、溶液中泡泡對晶片的影響、陽極壽命對均勻度與厚度的影響,針對此六項所得到的結果來比較,哪些項目影響銅製程電鍍的均勻度與厚度比較明顯,並對此研究項目所得到的結果來做改善,以提升銅製程電鍍的均勻度與厚度。
This thesis analyses the uniformity and thickness of copper film which can greatly affect the quality of wafer production. We would focus on the effects of that how hardware affects the uniformity and thickness. Uniformity and thickness played a very important role in copper film plating. As a consequence, the quality of copper plating can be greatly evaluated by improving the key factors of hardware. There are six major elements based on this paper that can definitely affect the quality of uniformity and thickness. The size of plating cell, the gap between wafer and anode when processing, the center of electrode bipolar, the leveling of the cell, bubbles effects on the film quality and how the anode lifetime affects the uniformity and film thickness. We would take experiments to compare which key factors listed above that affects the core concern “the Uniformity and Thickness” more. According to the experimental results, the copper film can be made better and the more efficient approaches are identified.